TY - GEN
T1 - Comparative study of tri-gate flash memories with split and stack gates
AU - Kamei, T.
AU - Liu, Y. X.
AU - Matsukawa, T.
AU - Endo, K.
AU - O'uchi, S.
AU - Tsukada, J.
AU - Yamauchi, H.
AU - Ishikawa, Y.
AU - Hayashida, T.
AU - Sakamoto, K.
AU - Ogura, A.
AU - Masahara, M.
PY - 2011
Y1 - 2011
N2 - The functional tri-gate flash memories with splitgate have been demonstrated for the first time, and its V t variabilities before and after one P/E cycle have be systimetically compared with stack-gate ones. It was confirmed that split-gate shows smaller V t distribution after erase and excellent over-erase immunity compared to those of stack-gate. Moreover, it was found that BV DS is higher than 3.2 V even L gc was down to 76 nm. This indictes that tri-gate is useful for scaled NOR flash.
AB - The functional tri-gate flash memories with splitgate have been demonstrated for the first time, and its V t variabilities before and after one P/E cycle have be systimetically compared with stack-gate ones. It was confirmed that split-gate shows smaller V t distribution after erase and excellent over-erase immunity compared to those of stack-gate. Moreover, it was found that BV DS is higher than 3.2 V even L gc was down to 76 nm. This indictes that tri-gate is useful for scaled NOR flash.
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U2 - 10.1109/SOI.2011.6081721
DO - 10.1109/SOI.2011.6081721
M3 - Conference contribution
AN - SCOPUS:83455169141
SN - 9781612847597
T3 - Proceedings - IEEE International SOI Conference
BT - IEEE International SOI Conference, SOI 2011
T2 - 2011 IEEE International SOI Conference, SOI 2011
Y2 - 3 October 2011 through 6 October 2011
ER -