The functional tri-gate flash memories with splitgate have been demonstrated for the first time, and its V t variabilities before and after one P/E cycle have be systimetically compared with stack-gate ones. It was confirmed that split-gate shows smaller V t distribution after erase and excellent over-erase immunity compared to those of stack-gate. Moreover, it was found that BV DS is higher than 3.2 V even L gc was down to 76 nm. This indictes that tri-gate is useful for scaled NOR flash.
|Title of host publication||IEEE International SOI Conference, SOI 2011|
|Publication status||Published - 2011|
|Event||2011 IEEE International SOI Conference, SOI 2011 - Tempe, AZ, United States|
Duration: 2011 Oct 3 → 2011 Oct 6
|Name||Proceedings - IEEE International SOI Conference|
|Conference||2011 IEEE International SOI Conference, SOI 2011|
|Period||11/10/3 → 11/10/6|