Comparative study on ALD/CVD-Co(W) films as a single barrier/liner layer for 22-1x nm generation interconnects

Hideharu Shimizu; Henry Wojcik; Kohei Shima; Yoshihiko Kobayashi; Takeshi Momose; Johann W. Bartha; Yukihiro Shimogaki

doi:10.1109/IITC.2012.6251657

Comparative study on ALD/CVD-Co(W) films as a single barrier/liner layer for 22-1x nm generation interconnects

Hideharu Shimizu, Henry Wojcik, Kohei Shima, Yoshihiko Kobayashi, Takeshi Momose, Johann W. Bartha, Yukihiro Shimogaki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

ALD-Co(W) was found to have a potential to replace the conventional PVD-Ta/TaN bi-layer in further shrinking interconnects as a single-layered barrier/liner material. We could confirm good barrier property of CVD/ALD-Co(W) film by BTS-TVS method after 350°C annealing. ALD-Co(W) showed lower resistivity of 60 μΩ-cm and good adhesion to Cu. Complete trench filling with Co(W) followed by Cu seed deposition was demonstrated. These properties were confirmed to be derived from W stuffing into grain boundaries of oxygen-free ALD-Co(W) films. We would like to suggest ALD-Co(W) as a next-generation barrier/liner layer for future development.

Original language	English
Title of host publication	2012 IEEE International Interconnect Technology Conference, IITC 2012
DOIs	https://doi.org/10.1109/IITC.2012.6251657
Publication status	Published - 2012 Oct 1
Externally published	Yes
Event	2012 IEEE International Interconnect Technology Conference, IITC 2012 - San Jose, CA, United States Duration: 2012 Jun 4 → 2012 Jun 6

Publication series

Name	2012 IEEE International Interconnect Technology Conference, IITC 2012

Other

Other	2012 IEEE International Interconnect Technology Conference, IITC 2012
Country/Territory	United States
City	San Jose, CA
Period	12/6/4 → 12/6/6

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/IITC.2012.6251657

Cite this

Shimizu, H., Wojcik, H., Shima, K., Kobayashi, Y., Momose, T., Bartha, J. W., & Shimogaki, Y. (2012). Comparative study on ALD/CVD-Co(W) films as a single barrier/liner layer for 22-1x nm generation interconnects. In 2012 IEEE International Interconnect Technology Conference, IITC 2012 [6251657] (2012 IEEE International Interconnect Technology Conference, IITC 2012). https://doi.org/10.1109/IITC.2012.6251657

Comparative study on ALD/CVD-Co(W) films as a single barrier/liner layer for 22-1x nm generation interconnects. / Shimizu, Hideharu; Wojcik, Henry; Shima, Kohei et al.
2012 IEEE International Interconnect Technology Conference, IITC 2012. 2012. 6251657 (2012 IEEE International Interconnect Technology Conference, IITC 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shimizu, H, Wojcik, H, Shima, K, Kobayashi, Y, Momose, T, Bartha, JW & Shimogaki, Y 2012, Comparative study on ALD/CVD-Co(W) films as a single barrier/liner layer for 22-1x nm generation interconnects. in 2012 IEEE International Interconnect Technology Conference, IITC 2012., 6251657, 2012 IEEE International Interconnect Technology Conference, IITC 2012, 2012 IEEE International Interconnect Technology Conference, IITC 2012, San Jose, CA, United States, 12/6/4. https://doi.org/10.1109/IITC.2012.6251657

Shimizu H, Wojcik H, Shima K, Kobayashi Y, Momose T, Bartha JW et al. Comparative study on ALD/CVD-Co(W) films as a single barrier/liner layer for 22-1x nm generation interconnects. In 2012 IEEE International Interconnect Technology Conference, IITC 2012. 2012. 6251657. (2012 IEEE International Interconnect Technology Conference, IITC 2012). doi: 10.1109/IITC.2012.6251657

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abstract = "ALD-Co(W) was found to have a potential to replace the conventional PVD-Ta/TaN bi-layer in further shrinking interconnects as a single-layered barrier/liner material. We could confirm good barrier property of CVD/ALD-Co(W) film by BTS-TVS method after 350°C annealing. ALD-Co(W) showed lower resistivity of 60 μΩ-cm and good adhesion to Cu. Complete trench filling with Co(W) followed by Cu seed deposition was demonstrated. These properties were confirmed to be derived from W stuffing into grain boundaries of oxygen-free ALD-Co(W) films. We would like to suggest ALD-Co(W) as a next-generation barrier/liner layer for future development.",

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AB - ALD-Co(W) was found to have a potential to replace the conventional PVD-Ta/TaN bi-layer in further shrinking interconnects as a single-layered barrier/liner material. We could confirm good barrier property of CVD/ALD-Co(W) film by BTS-TVS method after 350°C annealing. ALD-Co(W) showed lower resistivity of 60 μΩ-cm and good adhesion to Cu. Complete trench filling with Co(W) followed by Cu seed deposition was demonstrated. These properties were confirmed to be derived from W stuffing into grain boundaries of oxygen-free ALD-Co(W) films. We would like to suggest ALD-Co(W) as a next-generation barrier/liner layer for future development.

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Comparative study on ALD/CVD-Co(W) films as a single barrier/liner layer for 22-1x nm generation interconnects

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