Comparative study on effective electron mobility in FinFETs with a (111) channel surface fabricated by wet and dry etching processes

Y. X. Liu; E. Sugimata; M. Masahara; K. Ishii; K. Endo; T. Matsukawa; H. Yamauchi; E. Suzuki

doi:10.1109/imnc.2005.203839

Comparative study on effective electron mobility in FinFETs with a (111) channel surface fabricated by wet and dry etching processes

Y. X. Liu, E. Sugimata, M. Masahara, K. Ishii, K. Endo, T. Matsukawa, H. Yamauchi, E. Suzuki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The quantitative comparison of the electron mobility (u_eff) in the poly-Si gated n-channel multi-FinFETs fabricated by the orientation- dependent wet etching and conventional RIE processes has been carried out. A remarkable increment in U_eff has experimentally been confirmed in the Si-fin channels fabricated by the wet etching instead of the RIE. Therefore, it is concluded that the developed wet etching technique is very attractive for the fabrication process of the high quality and ultra-thin Si-fin channel FinFETs.

Original language	English
Title of host publication	Digest of Papers - Microprocesses and Nanotechnology 2005
Subtitle of host publication	2005 International Microprocesses and Nanotechnology Conference
Publisher	IEEE Computer Society
Pages	264-265
Number of pages	2
ISBN (Print)	4990247221, 9784990247225
DOIs	https://doi.org/10.1109/imnc.2005.203839
Publication status	Published - 2005 Jan 1
Externally published	Yes
Event	2005 International Microprocesses and Nanotechnology Conference - Tokyo, Japan Duration: 2005 Oct 25 → 2005 Oct 28

Publication series

Name	Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference
Volume	2005

Other

Other	2005 International Microprocesses and Nanotechnology Conference
Country/Territory	Japan
City	Tokyo
Period	05/10/25 → 05/10/28

ASJC Scopus subject areas

Engineering(all)

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10.1109/imnc.2005.203839

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Liu, Y. X., Sugimata, E., Masahara, M., Ishii, K., Endo, K., Matsukawa, T., Yamauchi, H., & Suzuki, E. (2005). Comparative study on effective electron mobility in FinFETs with a (111) channel surface fabricated by wet and dry etching processes. In Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference (pp. 264-265). [1595315] (Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference; Vol. 2005). IEEE Computer Society. https://doi.org/10.1109/imnc.2005.203839

Comparative study on effective electron mobility in FinFETs with a (111) channel surface fabricated by wet and dry etching processes. / Liu, Y. X.; Sugimata, E.; Masahara, M. et al.

Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference. IEEE Computer Society, 2005. p. 264-265 1595315 (Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liu, YX, Sugimata, E, Masahara, M, Ishii, K, Endo, K, Matsukawa, T, Yamauchi, H & Suzuki, E 2005, Comparative study on effective electron mobility in FinFETs with a (111) channel surface fabricated by wet and dry etching processes. in Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference., 1595315, Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference, vol. 2005, IEEE Computer Society, pp. 264-265, 2005 International Microprocesses and Nanotechnology Conference, Tokyo, Japan, 05/10/25. https://doi.org/10.1109/imnc.2005.203839

Liu YX, Sugimata E, Masahara M, Ishii K, Endo K, Matsukawa T et al. Comparative study on effective electron mobility in FinFETs with a (111) channel surface fabricated by wet and dry etching processes. In Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference. IEEE Computer Society. 2005. p. 264-265. 1595315. (Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference). doi: 10.1109/imnc.2005.203839

Liu, Y. X. ; Sugimata, E. ; Masahara, M. et al. / Comparative study on effective electron mobility in FinFETs with a (111) channel surface fabricated by wet and dry etching processes. Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference. IEEE Computer Society, 2005. pp. 264-265 (Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference).

@inproceedings{df70c47ea3404a97a09ad4c4d3c22ff4,

title = "Comparative study on effective electron mobility in FinFETs with a (111) channel surface fabricated by wet and dry etching processes",

abstract = "The quantitative comparison of the electron mobility (ueff) in the poly-Si gated n-channel multi-FinFETs fabricated by the orientation- dependent wet etching and conventional RIE processes has been carried out. A remarkable increment in Ueff has experimentally been confirmed in the Si-fin channels fabricated by the wet etching instead of the RIE. Therefore, it is concluded that the developed wet etching technique is very attractive for the fabrication process of the high quality and ultra-thin Si-fin channel FinFETs.",

author = "Liu, {Y. X.} and E. Sugimata and M. Masahara and K. Ishii and K. Endo and T. Matsukawa and H. Yamauchi and E. Suzuki",

year = "2005",

month = jan,

day = "1",

doi = "10.1109/imnc.2005.203839",

language = "English",

isbn = "4990247221",

series = "Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference",

publisher = "IEEE Computer Society",

pages = "264--265",

booktitle = "Digest of Papers - Microprocesses and Nanotechnology 2005",

note = "2005 International Microprocesses and Nanotechnology Conference ; Conference date: 25-10-2005 Through 28-10-2005",

}

TY - GEN

T1 - Comparative study on effective electron mobility in FinFETs with a (111) channel surface fabricated by wet and dry etching processes

AU - Liu, Y. X.

AU - Sugimata, E.

AU - Masahara, M.

AU - Ishii, K.

AU - Endo, K.

AU - Matsukawa, T.

AU - Yamauchi, H.

AU - Suzuki, E.

PY - 2005/1/1

Y1 - 2005/1/1

N2 - The quantitative comparison of the electron mobility (ueff) in the poly-Si gated n-channel multi-FinFETs fabricated by the orientation- dependent wet etching and conventional RIE processes has been carried out. A remarkable increment in Ueff has experimentally been confirmed in the Si-fin channels fabricated by the wet etching instead of the RIE. Therefore, it is concluded that the developed wet etching technique is very attractive for the fabrication process of the high quality and ultra-thin Si-fin channel FinFETs.

AB - The quantitative comparison of the electron mobility (ueff) in the poly-Si gated n-channel multi-FinFETs fabricated by the orientation- dependent wet etching and conventional RIE processes has been carried out. A remarkable increment in Ueff has experimentally been confirmed in the Si-fin channels fabricated by the wet etching instead of the RIE. Therefore, it is concluded that the developed wet etching technique is very attractive for the fabrication process of the high quality and ultra-thin Si-fin channel FinFETs.

UR - http://www.scopus.com/inward/record.url?scp=33847180209&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847180209&partnerID=8YFLogxK

U2 - 10.1109/imnc.2005.203839

DO - 10.1109/imnc.2005.203839

M3 - Conference contribution

AN - SCOPUS:33847180209

SN - 4990247221

SN - 9784990247225

T3 - Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference

SP - 264

EP - 265

BT - Digest of Papers - Microprocesses and Nanotechnology 2005

PB - IEEE Computer Society

T2 - 2005 International Microprocesses and Nanotechnology Conference

Y2 - 25 October 2005 through 28 October 2005

ER -

Comparative study on effective electron mobility in FinFETs with a (111) channel surface fabricated by wet and dry etching processes

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