TY - JOUR
T1 - Comparison of Al x Ga1-xN multiple quantum wells designed for 265 and 285 nm deep-ultraviolet LEDs grown on AlN templates having macrosteps
AU - Nagasawa, Yosuke
AU - Kojima, Kazunobu
AU - Hirano, Akira
AU - Ipponmatsu, Masamichi
AU - Honda, Yoshio
AU - Amano, Hiroshi
AU - Akasaki, Isamu
AU - Chichibu, Shigefusa F.
N1 - Publisher Copyright:
© 2019 The Japan Society of Applied Physics.
PY - 2019/6/1
Y1 - 2019/6/1
N2 - AlGaN multiple quantum wells (MQWs) targeting 265 and 285 nm deep-ultraviolet LEDs grown on AlN templates with macrosteps were compared. In the cathodoluminescence images of the 285 nm MQW, high-intensity zones were observed along the edgelines of the macrosteps with wavelengths of 290-296 nm and on the terraces with wavelengths of 286-288 nm. Dark spots related to threading dislocations were seen in the entire 285 nm MQW. For 265 nm, high-intensity zones were limited along the edgelines and dark spots showed a low-contrast, which is likely to be caused by nonradiative recombination centers due to point defects.
AB - AlGaN multiple quantum wells (MQWs) targeting 265 and 285 nm deep-ultraviolet LEDs grown on AlN templates with macrosteps were compared. In the cathodoluminescence images of the 285 nm MQW, high-intensity zones were observed along the edgelines of the macrosteps with wavelengths of 290-296 nm and on the terraces with wavelengths of 286-288 nm. Dark spots related to threading dislocations were seen in the entire 285 nm MQW. For 265 nm, high-intensity zones were limited along the edgelines and dark spots showed a low-contrast, which is likely to be caused by nonradiative recombination centers due to point defects.
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U2 - 10.7567/1882-0786/ab21a9
DO - 10.7567/1882-0786/ab21a9
M3 - Article
AN - SCOPUS:85069432942
SN - 1882-0778
VL - 12
JO - Applied Physics Express
JF - Applied Physics Express
IS - 6
M1 - 064009
ER -