Comparison of light-emission efficiencies from Si-metal-oxide-semiconductor junctions and from Si in scanning tunneling microscopy

Yoichi Uehara; Masashi Kuwahara; Sukekatsu Ushioda

doi:10.1143/jjap.39.4904

Comparison of light-emission efficiencies from Si-metal-oxide-semiconductor junctions and from Si in scanning tunneling microscopy

Yoichi Uehara, Masashi Kuwahara, Sukekatsu Ushioda

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We have investigated the mechanism of scanning tunneling microscope (STM) visible light emission from n-type Si(100). The current fluctuation theory that explained the light emission characteristics of the Si-metal-oxide-semiconductor (Si-MOS) tunnel junction is applied to the STM light emission from n-type Si(100). This theory reproduces the observed STM light emission spectra, and predicts that the light emission efficiency from the STM geometry is approximately 1.5×10⁴ times greater than that from the Si-MOS junctions. This prediction is consistent with our experimental result. Experimentally, the light emission intensity from the Si surface under the STM is comparable to that from the Si-MOS junction, although the tunneling current in the STM is 10^-3 of the current in the Si-MOS junction. That is, the light emission efficiency from the STM is at least 10³ times greater than that from the Si-MOS.

Original language	English
Pages (from-to)	4904-4909
Number of pages	6
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	39
Issue number	8
DOIs	https://doi.org/10.1143/jjap.39.4904
Publication status	Published - 2000 Aug
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Comparison of light-emission efficiencies from Si-metal-oxide-semiconductor junctions and from Si in scanning tunneling microscopy. / Uehara, Yoichi; Kuwahara, Masashi; Ushioda, Sukekatsu.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 8, 08.2000, p. 4904-4909.

Research output: Contribution to journal › Article › peer-review

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abstract = "We have investigated the mechanism of scanning tunneling microscope (STM) visible light emission from n-type Si(100). The current fluctuation theory that explained the light emission characteristics of the Si-metal-oxide-semiconductor (Si-MOS) tunnel junction is applied to the STM light emission from n-type Si(100). This theory reproduces the observed STM light emission spectra, and predicts that the light emission efficiency from the STM geometry is approximately 1.5×104 times greater than that from the Si-MOS junctions. This prediction is consistent with our experimental result. Experimentally, the light emission intensity from the Si surface under the STM is comparable to that from the Si-MOS junction, although the tunneling current in the STM is 10-3 of the current in the Si-MOS junction. That is, the light emission efficiency from the STM is at least 103 times greater than that from the Si-MOS.",

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Comparison of light-emission efficiencies from Si-metal-oxide-semiconductor junctions and from Si in scanning tunneling microscopy

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