Comparison of the initial oxidation kinetics between Si (001) and Si (111) surfaces

Syuichi Ogawa; Yuji Takakuwa

doi:10.3131/jvsj.47.235

Comparison of the initial oxidation kinetics between Si (001) and Si (111) surfaces

Syuichi Ogawa, Yuji Takakuwa

Micro System Integration Center (μSIC)

Tohoku University

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Real-time reflection high energy electron diffraction combined with Auger electron spectroscopy (RHEED-AES) was applied to investigate the oxide growth kinetics during initial oxidation on Si(001)2 × 1 and Si(111)7 × 7 surfaces. The correlation between the amount of adsorbed oxygen atoms obtained from O KLL Auger electron intensity and the unoxidized surface area estimated from RHEED spot intensities due to 2 × 1 or 7 7times; 7 structure revealed that adsorbed oxygen was able to migrate on the Si(111) 7 × 7 surface during Langmuir-type adsorption at 580°C, leading to nucleation and lateral growth of oxide as in the oxidation mode of two-dimensional oxide island growth appearing at higher temperatures, while growth of oxide during Langmuir-type adsorption on the Si(001)2 × 1 surface at 576°C progressed at the random sites where O₂ adsorption took place.

Original language	English
Pages (from-to)	235-238
Number of pages	4
Journal	Shinku/Journal of the Vacuum Society of Japan
Volume	47
Issue number	3
DOIs	https://doi.org/10.3131/jvsj.47.235
Publication status	Published - 2004

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title = "Comparison of the initial oxidation kinetics between Si (001) and Si (111) surfaces",

abstract = "Real-time reflection high energy electron diffraction combined with Auger electron spectroscopy (RHEED-AES) was applied to investigate the oxide growth kinetics during initial oxidation on Si(001)2 × 1 and Si(111)7 × 7 surfaces. The correlation between the amount of adsorbed oxygen atoms obtained from O KLL Auger electron intensity and the unoxidized surface area estimated from RHEED spot intensities due to 2 × 1 or 7 7times; 7 structure revealed that adsorbed oxygen was able to migrate on the Si(111) 7 × 7 surface during Langmuir-type adsorption at 580°C, leading to nucleation and lateral growth of oxide as in the oxidation mode of two-dimensional oxide island growth appearing at higher temperatures, while growth of oxide during Langmuir-type adsorption on the Si(001)2 × 1 surface at 576°C progressed at the random sites where O2 adsorption took place.",

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AU - Takakuwa, Yuji

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AB - Real-time reflection high energy electron diffraction combined with Auger electron spectroscopy (RHEED-AES) was applied to investigate the oxide growth kinetics during initial oxidation on Si(001)2 × 1 and Si(111)7 × 7 surfaces. The correlation between the amount of adsorbed oxygen atoms obtained from O KLL Auger electron intensity and the unoxidized surface area estimated from RHEED spot intensities due to 2 × 1 or 7 7times; 7 structure revealed that adsorbed oxygen was able to migrate on the Si(111) 7 × 7 surface during Langmuir-type adsorption at 580°C, leading to nucleation and lateral growth of oxide as in the oxidation mode of two-dimensional oxide island growth appearing at higher temperatures, while growth of oxide during Langmuir-type adsorption on the Si(001)2 × 1 surface at 576°C progressed at the random sites where O2 adsorption took place.

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Comparison of the initial oxidation kinetics between Si (001) and Si (111) surfaces

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