TY - JOUR
T1 - Complementary analyses on the local polarity in lateral polarity-inverted GaN heterostructure on sapphire (0001) substrate
AU - Katayama, Ryuji
AU - Kuge, Yoshihiro
AU - Onabe, Kentaro
AU - Matsushita, Tomonori
AU - Kondo, Takashi
N1 - Funding Information:
The authors appreciate the helpful assistance provided by M. Ichikawa of ISSP in the FIB process, by S. Ikeda in the KFM measurements, and H. Matsuzaki in the Raman investigations. This work was supported by the Grant-in-Aid for Young Scientists (B) No. 16760032 from the Ministry of Education, Culture, Sports, Science and Technology of Japan and the Futaba Electronics Memorial Foundation.
PY - 2006
Y1 - 2006
N2 - The fabrication of the lateral polarity-inverted GaN heterostructure on sapphire (0001) using a radio-frequency-plasma-enhanced molecular beam epitaxy is demonstrated. Its microscopic properties such as surface potentials, piezoelectric polarizations, and residual carrier densities were investigated by Kelvin force microscopy and micro-Raman scattering. The inversion from Ga polarity to N polarity in a specific domain and its higher crystal perfection had been unambiguously confirmed by these complementary analyses. The results were also fairly consistent with that of KOH etching, which suggests the applicability of these processes to the fabrication of photonic nanostructures.
AB - The fabrication of the lateral polarity-inverted GaN heterostructure on sapphire (0001) using a radio-frequency-plasma-enhanced molecular beam epitaxy is demonstrated. Its microscopic properties such as surface potentials, piezoelectric polarizations, and residual carrier densities were investigated by Kelvin force microscopy and micro-Raman scattering. The inversion from Ga polarity to N polarity in a specific domain and its higher crystal perfection had been unambiguously confirmed by these complementary analyses. The results were also fairly consistent with that of KOH etching, which suggests the applicability of these processes to the fabrication of photonic nanostructures.
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U2 - 10.1063/1.2398924
DO - 10.1063/1.2398924
M3 - Article
AN - SCOPUS:33845433500
SN - 0003-6951
VL - 89
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 23
M1 - 231910
ER -