Abstract
Ultraprecision diamond-cut silicon wafers were irradiated by a nanosecond pulsed Nd:YAG laser, and the resulting specimens were characterized using transmission electron microscopy and micro-Raman spectroscopy. The results indicate that at specific laser energy density levels, machining-induced amorphous layers and dislocated layers were both reconstructed to a complete single-crystal structure identical to the bulk region. Similar effects were confirmed for diamond-ground silicon wafers. Effects of overlapping irradiation were investigated and perfect crystallographic uniformity was achieved in the boundary region. The recovery process involved rapid melting of the near-surface amorphous layer, followed by epitaxial regrowth from the damage-free crystalline bulk.
| Original language | English |
|---|---|
| Pages (from-to) | 469-474 |
| Number of pages | 6 |
| Journal | Key Engineering Materials |
| Volume | 389-390 |
| Publication status | Published - 2009 Jan 1 |
Keywords
- Nd:YAG laser
- Phase transformation
- Single crystal silicon
- Subsurface damage
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering