Composition dependence of thermoelectric properties of binary narrow-gap Ga67-xRu33+x compound

Y. Takagiwa, J. T. Okada, K. Kimura

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20 Citations (Scopus)


The composition and carrier concentration variations of the thermoelectric properties of the binary narrow-gap compound Ga67-xRu33+x have been investigated. The measured samples were synthesized by a combination of arc-melting and spark plasma sintering (SPS), succeeded in crack-free samples. We report that the temperature dependences of the electrical resistivity and Seebeck coefficient of the Ga67-xRu33+x are strongly affected by nominal Ru concentration. The Seebeck coefficients showed large positive values from 170 to 350 μV K-1 at 373 K. Also, large power factors from 2.2 to 3.0 mW m-1 K-2 were obtained at 773 K. The dimensionless figures of merit ZT beneficially increased with increasing temperature and reached a maximum value of 0.50 at about 773 K.

Original languageEnglish
Pages (from-to)364-369
Number of pages6
JournalJournal of Alloys and Compounds
Issue number2
Publication statusPublished - 2010 Oct 8


  • Narrow-band-gap semiconductor
  • Nowotny chimney-ladder phase
  • Ruthenium gallide
  • Spark plasma sintering
  • Thermoelectric material


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