Compositional Dependence of Exchange Anisotropy in PtxMn100-x/CoyFe100-y Films

Sina Ranjbar; Masakiyo Tsunoda; Muftah Al-Mahdawi; Mikihiko Oogane; Yasuo Ando

doi:10.1109/LMAG.2019.2940674

Compositional Dependence of Exchange Anisotropy in Pt_xMn_100-x/Co_yFe_100-y Films

Sina Ranjbar, Masakiyo Tsunoda, Muftah Al-Mahdawi, Mikihiko Oogane, Yasuo Ando

Tohoku University

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Bilayer films consisting of a 15 nm thick Pt_xMn_100-x (x = 48 or 15) layer and a 2 nm thick Co_y Fe_100-y (0 ≤ y ≤ 90) layer were fabricated by ultrahigh-vacuum magnetron sputtering. The Pt₄₈Mn₅₂ and Pt₁₅Mn₈₅ films consisted of face-centered tetragonal (FCT) and face-centered cubic (FCC) structures, respectively. The effect of composition of CoFe films on the unidirectional anisotropy constant (J_k) in the Pt_xMn_100-x/Co_yFe_100-y bilayer films and the optimum conditions for producing large J_kwere determined. The FCT and FCC PtMn films annealed at 370 °C for 6 h both exhibited maximum J_kwhen the film composition was Co₇₀Fe₃₀. Blocking temperatures of the FCT and FCC PtMn films were 410 °C and 160 °C, respectively. All the bilayer films possess flat surfaces. These results indicate that the obtained Pt-Mn films-with low roughness, high exchange bias, and high blocking temperature-will be practical candidates as the antiferromagnetic layer in spintronic devices.

Original language	English
Article number	8828068
Journal	IEEE Magnetics Letters
Volume	10
DOIs	https://doi.org/10.1109/LMAG.2019.2940674
Publication status	Published - 2019

Keywords

Spin electronics
antiferromagnetic
exchange anisotropy
ferromagnetic
spintronic applications
thin film

Access to Document

10.1109/LMAG.2019.2940674

Cite this

@article{92857ae248b74b9184b102e8ca1cc9bb,

title = "Compositional Dependence of Exchange Anisotropy in PtxMn100-x/CoyFe100-y Films",

abstract = "Bilayer films consisting of a 15 nm thick PtxMn100-x (x = 48 or 15) layer and a 2 nm thick Coy Fe100-y (0 ≤ y ≤ 90) layer were fabricated by ultrahigh-vacuum magnetron sputtering. The Pt48Mn52 and Pt15Mn85 films consisted of face-centered tetragonal (FCT) and face-centered cubic (FCC) structures, respectively. The effect of composition of CoFe films on the unidirectional anisotropy constant (Jk) in the PtxMn100-x/CoyFe100-y bilayer films and the optimum conditions for producing large Jkwere determined. The FCT and FCC PtMn films annealed at 370 °C for 6 h both exhibited maximum Jkwhen the film composition was Co70Fe30. Blocking temperatures of the FCT and FCC PtMn films were 410 °C and 160 °C, respectively. All the bilayer films possess flat surfaces. These results indicate that the obtained Pt-Mn films-with low roughness, high exchange bias, and high blocking temperature-will be practical candidates as the antiferromagnetic layer in spintronic devices.",

keywords = "Spin electronics, antiferromagnetic, exchange anisotropy, ferromagnetic, spintronic applications, thin film",

author = "Sina Ranjbar and Masakiyo Tsunoda and Muftah Al-Mahdawi and Mikihiko Oogane and Yasuo Ando",

note = "Funding Information: This work was supported in part by the S-Innovation program, Japan Science and Technology Agency, the Center for Innovative Integrated Electronic Systems, the Center for Spintronics Research Network, and the Center for Science and Innovation in Spintronics, Tohoku University. Publisher Copyright: {\textcopyright} 2010-2012 IEEE.",

year = "2019",

doi = "10.1109/LMAG.2019.2940674",

language = "English",

volume = "10",

journal = "IEEE Magnetics Letters",

issn = "1949-307X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Compositional Dependence of Exchange Anisotropy in PtxMn100-x/CoyFe100-y Films

AU - Ranjbar, Sina

AU - Tsunoda, Masakiyo

AU - Al-Mahdawi, Muftah

AU - Oogane, Mikihiko

AU - Ando, Yasuo

N1 - Funding Information: This work was supported in part by the S-Innovation program, Japan Science and Technology Agency, the Center for Innovative Integrated Electronic Systems, the Center for Spintronics Research Network, and the Center for Science and Innovation in Spintronics, Tohoku University. Publisher Copyright: © 2010-2012 IEEE.

PY - 2019

Y1 - 2019

N2 - Bilayer films consisting of a 15 nm thick PtxMn100-x (x = 48 or 15) layer and a 2 nm thick Coy Fe100-y (0 ≤ y ≤ 90) layer were fabricated by ultrahigh-vacuum magnetron sputtering. The Pt48Mn52 and Pt15Mn85 films consisted of face-centered tetragonal (FCT) and face-centered cubic (FCC) structures, respectively. The effect of composition of CoFe films on the unidirectional anisotropy constant (Jk) in the PtxMn100-x/CoyFe100-y bilayer films and the optimum conditions for producing large Jkwere determined. The FCT and FCC PtMn films annealed at 370 °C for 6 h both exhibited maximum Jkwhen the film composition was Co70Fe30. Blocking temperatures of the FCT and FCC PtMn films were 410 °C and 160 °C, respectively. All the bilayer films possess flat surfaces. These results indicate that the obtained Pt-Mn films-with low roughness, high exchange bias, and high blocking temperature-will be practical candidates as the antiferromagnetic layer in spintronic devices.

AB - Bilayer films consisting of a 15 nm thick PtxMn100-x (x = 48 or 15) layer and a 2 nm thick Coy Fe100-y (0 ≤ y ≤ 90) layer were fabricated by ultrahigh-vacuum magnetron sputtering. The Pt48Mn52 and Pt15Mn85 films consisted of face-centered tetragonal (FCT) and face-centered cubic (FCC) structures, respectively. The effect of composition of CoFe films on the unidirectional anisotropy constant (Jk) in the PtxMn100-x/CoyFe100-y bilayer films and the optimum conditions for producing large Jkwere determined. The FCT and FCC PtMn films annealed at 370 °C for 6 h both exhibited maximum Jkwhen the film composition was Co70Fe30. Blocking temperatures of the FCT and FCC PtMn films were 410 °C and 160 °C, respectively. All the bilayer films possess flat surfaces. These results indicate that the obtained Pt-Mn films-with low roughness, high exchange bias, and high blocking temperature-will be practical candidates as the antiferromagnetic layer in spintronic devices.

KW - Spin electronics

KW - antiferromagnetic

KW - exchange anisotropy

KW - ferromagnetic

KW - spintronic applications

KW - thin film

UR - http://www.scopus.com/inward/record.url?scp=85077749658&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85077749658&partnerID=8YFLogxK

U2 - 10.1109/LMAG.2019.2940674

DO - 10.1109/LMAG.2019.2940674

M3 - Article

AN - SCOPUS:85077749658

SN - 1949-307X

VL - 10

JO - IEEE Magnetics Letters

JF - IEEE Magnetics Letters

M1 - 8828068

ER -

Compositional Dependence of Exchange Anisotropy in Pt_xMn_100-x/Co_yFe_100-y Films

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this