Compositional disordering and very-fine lateral definition of GaAs-AlGaAs superlattices by focused Ga ion beams

Y. Hirayama; Y. Suzuki; H. Okamoto

doi:10.1016/0039-6028(86)90393-6

Compositional disordering and very-fine lateral definition of GaAs-AlGaAs superlattices by focused Ga ion beams

Y. Hirayama, Y. Suzuki, H. Okamoto

Center for Science and Innovation in Spintronics (CSIS)

Nippon Telegraph & Telephone

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

Compositional disordering induced by Ga ion implantation was studied in GaAs-AlGaAs superlattices. A submicron periodic structure of superlattice region and compositionally disordered region over a surface of a superlattice epitaxial wafer was successfully fabricated using line-and-space scan of focused Ga ion beam implantation and annealing.

Original language	English
Pages (from-to)	98-104
Number of pages	7
Journal	Surface Science
Volume	174
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(86)90393-6
Publication status	Published - 1986 Aug 3

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10.1016/0039-6028(86)90393-6

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title = "Compositional disordering and very-fine lateral definition of GaAs-AlGaAs superlattices by focused Ga ion beams",

abstract = "Compositional disordering induced by Ga ion implantation was studied in GaAs-AlGaAs superlattices. A submicron periodic structure of superlattice region and compositionally disordered region over a surface of a superlattice epitaxial wafer was successfully fabricated using line-and-space scan of focused Ga ion beam implantation and annealing.",

author = "Y. Hirayama and Y. Suzuki and H. Okamoto",

year = "1986",

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doi = "10.1016/0039-6028(86)90393-6",

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T1 - Compositional disordering and very-fine lateral definition of GaAs-AlGaAs superlattices by focused Ga ion beams

AU - Hirayama, Y.

AU - Suzuki, Y.

AU - Okamoto, H.

PY - 1986/8/3

Y1 - 1986/8/3

N2 - Compositional disordering induced by Ga ion implantation was studied in GaAs-AlGaAs superlattices. A submicron periodic structure of superlattice region and compositionally disordered region over a surface of a superlattice epitaxial wafer was successfully fabricated using line-and-space scan of focused Ga ion beam implantation and annealing.

AB - Compositional disordering induced by Ga ion implantation was studied in GaAs-AlGaAs superlattices. A submicron periodic structure of superlattice region and compositionally disordered region over a surface of a superlattice epitaxial wafer was successfully fabricated using line-and-space scan of focused Ga ion beam implantation and annealing.

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U2 - 10.1016/0039-6028(86)90393-6

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M3 - Article

AN - SCOPUS:4243624021

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VL - 174

SP - 98

EP - 104

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Compositional disordering and very-fine lateral definition of GaAs-AlGaAs superlattices by focused Ga ion beams

Abstract

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