Comprehensive analysis of I on variation in metal gate FinFETs for 20nm and beyond

Takashi Matsukawa; Yongxun Liu; Shin Ichi O'uchi; Kazuhiko Endo; Junichi Tsukada; Hiromi Yamauchi; Yuki Ishikawa; Hiroyuki Ota; Shinji Migita; Yukinori Morita; Wataru Mizubayashi; Kunihiro Sakamoto; Meishoku Masahara

doi:10.1109/IEDM.2011.6131598

Comprehensive analysis of I _on variation in metal gate FinFETs for 20nm and beyond

Takashi Matsukawa, Yongxun Liu, Shin Ichi O'uchi, Kazuhiko Endo, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Hiroyuki Ota, Shinji Migita, Yukinori Morita, Wataru Mizubayashi, Kunihiro Sakamoto, Meishoku Masahara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

On-current (I _on) variation in metal gate FinFETs is comprehensively investigated with regard to the contributions of threshold voltage (V _t), parasitic resistance (R _para) and trans-conductance (G _m) variations, which are successfully extracted as the independent variation sources. It is experimentally confirmed that the G _m variation of the FinFETs exhibits a linear relationship in Pelgrom plot as well as the V _t variation, and is not reduced with scaling the gate dielectric thickness unlike the V _t variation. Perspective for beyond 20nm represents that the G _m variation will be the dominant I _on variation source. A solution to reduce the G _m variation for the FinFET is also proposed.

Original language	English
Title of host publication	2011 International Electron Devices Meeting, IEDM 2011
Pages	23.5.1-23.5.4
DOIs	https://doi.org/10.1109/IEDM.2011.6131598
Publication status	Published - 2011 Dec 1
Externally published	Yes
Event	2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States Duration: 2011 Dec 5 → 2011 Dec 7

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2011 IEEE International Electron Devices Meeting, IEDM 2011
Country/Territory	United States
City	Washington, DC
Period	11/12/5 → 11/12/7

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2011.6131598

Cite this

Matsukawa, T., Liu, Y., O'uchi, S. I., Endo, K., Tsukada, J., Yamauchi, H., Ishikawa, Y., Ota, H., Migita, S., Morita, Y., Mizubayashi, W., Sakamoto, K., & Masahara, M. (2011). Comprehensive analysis of I _on variation in metal gate FinFETs for 20nm and beyond. In 2011 International Electron Devices Meeting, IEDM 2011 (pp. 23.5.1-23.5.4). [6131598] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2011.6131598

Comprehensive analysis of I _on variation in metal gate FinFETs for 20nm and beyond. / Matsukawa, Takashi; Liu, Yongxun; O'uchi, Shin Ichi et al.
2011 International Electron Devices Meeting, IEDM 2011. 2011. p. 23.5.1-23.5.4 6131598 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Matsukawa, T, Liu, Y, O'uchi, SI, Endo, K, Tsukada, J, Yamauchi, H, Ishikawa, Y, Ota, H, Migita, S, Morita, Y, Mizubayashi, W, Sakamoto, K & Masahara, M 2011, Comprehensive analysis of I _on variation in metal gate FinFETs for 20nm and beyond. in 2011 International Electron Devices Meeting, IEDM 2011., 6131598, Technical Digest - International Electron Devices Meeting, IEDM, pp. 23.5.1-23.5.4, 2011 IEEE International Electron Devices Meeting, IEDM 2011, Washington, DC, United States, 11/12/5. https://doi.org/10.1109/IEDM.2011.6131598

@inproceedings{570e0f95b7504a84adda71ee3efeb389,

title = "Comprehensive analysis of I on variation in metal gate FinFETs for 20nm and beyond",

abstract = "On-current (I on) variation in metal gate FinFETs is comprehensively investigated with regard to the contributions of threshold voltage (V t), parasitic resistance (R para) and trans-conductance (G m) variations, which are successfully extracted as the independent variation sources. It is experimentally confirmed that the G m variation of the FinFETs exhibits a linear relationship in Pelgrom plot as well as the V t variation, and is not reduced with scaling the gate dielectric thickness unlike the V t variation. Perspective for beyond 20nm represents that the G m variation will be the dominant I on variation source. A solution to reduce the G m variation for the FinFET is also proposed.",

author = "Takashi Matsukawa and Yongxun Liu and O'uchi, {Shin Ichi} and Kazuhiko Endo and Junichi Tsukada and Hiromi Yamauchi and Yuki Ishikawa and Hiroyuki Ota and Shinji Migita and Yukinori Morita and Wataru Mizubayashi and Kunihiro Sakamoto and Meishoku Masahara",

year = "2011",

month = dec,

day = "1",

doi = "10.1109/IEDM.2011.6131598",

language = "English",

isbn = "9781457705052",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "23.5.1--23.5.4",

booktitle = "2011 International Electron Devices Meeting, IEDM 2011",

note = "2011 IEEE International Electron Devices Meeting, IEDM 2011 ; Conference date: 05-12-2011 Through 07-12-2011",

}

TY - GEN

T1 - Comprehensive analysis of I on variation in metal gate FinFETs for 20nm and beyond

AU - Matsukawa, Takashi

AU - Liu, Yongxun

AU - O'uchi, Shin Ichi

AU - Endo, Kazuhiko

AU - Tsukada, Junichi

AU - Yamauchi, Hiromi

AU - Ishikawa, Yuki

AU - Ota, Hiroyuki

AU - Migita, Shinji

AU - Morita, Yukinori

AU - Mizubayashi, Wataru

AU - Sakamoto, Kunihiro

AU - Masahara, Meishoku

PY - 2011/12/1

Y1 - 2011/12/1

N2 - On-current (I on) variation in metal gate FinFETs is comprehensively investigated with regard to the contributions of threshold voltage (V t), parasitic resistance (R para) and trans-conductance (G m) variations, which are successfully extracted as the independent variation sources. It is experimentally confirmed that the G m variation of the FinFETs exhibits a linear relationship in Pelgrom plot as well as the V t variation, and is not reduced with scaling the gate dielectric thickness unlike the V t variation. Perspective for beyond 20nm represents that the G m variation will be the dominant I on variation source. A solution to reduce the G m variation for the FinFET is also proposed.

AB - On-current (I on) variation in metal gate FinFETs is comprehensively investigated with regard to the contributions of threshold voltage (V t), parasitic resistance (R para) and trans-conductance (G m) variations, which are successfully extracted as the independent variation sources. It is experimentally confirmed that the G m variation of the FinFETs exhibits a linear relationship in Pelgrom plot as well as the V t variation, and is not reduced with scaling the gate dielectric thickness unlike the V t variation. Perspective for beyond 20nm represents that the G m variation will be the dominant I on variation source. A solution to reduce the G m variation for the FinFET is also proposed.

UR - http://www.scopus.com/inward/record.url?scp=84863067632&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863067632&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2011.6131598

DO - 10.1109/IEDM.2011.6131598

M3 - Conference contribution

AN - SCOPUS:84863067632

SN - 9781457705052

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 23.5.1-23.5.4

BT - 2011 International Electron Devices Meeting, IEDM 2011

T2 - 2011 IEEE International Electron Devices Meeting, IEDM 2011

Y2 - 5 December 2011 through 7 December 2011

ER -