Comprehensive analysis of variability sources of FinFET characteristics

T. Matsukawa; S. O'uchi; K. Endo; Y. Ishikawa; H. Yamauchi; Y. X. Liu; J. Tsukada; K. Sakamoto; M. Masahara

Comprehensive analysis of variability sources of FinFET characteristics

T. Matsukawa, S. O'uchi, K. Endo, Y. Ishikawa, H. Yamauchi, Y. X. Liu, J. Tsukada, K. Sakamoto, M. Masahara

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

National Institute of Advanced Industrial Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

144 Citations (Scopus)

Abstract

FinFET performance variability is comprehensively investigated for undoped/doped channels with various gate materials. By evaluating the influence of channel doping, fluctuation of gate length and that of fin thickness, it is found that gate workfunction variation (WFV) is the dominant source of V _t variation for the undoped FinFET and that the WFV increases with scaling of gate area. In addition, it is demonstrated that the extension doping optimization successfully reduces the variation of parasitic resistance (R _p) due to fin thickness fluctuation as well as R_p itself. FinFET-SRAM performance in 20-nm-L_g node is predicted by the compact model using the measured variation data.

Original language	English
Title of host publication	2009 Symposium on VLSI Technology, VLSIT 2009
Pages	118-119
Number of pages	2
Publication status	Published - 2009
Event	2009 Symposium on VLSI Technology, VLSIT 2009 - Kyoto, Japan Duration: 2009 Jun 16 → 2009 Jun 18

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Conference

Conference	2009 Symposium on VLSI Technology, VLSIT 2009
Country/Territory	Japan
City	Kyoto
Period	09/6/16 → 09/6/18

Cite this

@inproceedings{85daa69edde240dea8f4ee29353b75ee,

title = "Comprehensive analysis of variability sources of FinFET characteristics",

abstract = "FinFET performance variability is comprehensively investigated for undoped/doped channels with various gate materials. By evaluating the influence of channel doping, fluctuation of gate length and that of fin thickness, it is found that gate workfunction variation (WFV) is the dominant source of V t variation for the undoped FinFET and that the WFV increases with scaling of gate area. In addition, it is demonstrated that the extension doping optimization successfully reduces the variation of parasitic resistance (R p) due to fin thickness fluctuation as well as Rp itself. FinFET-SRAM performance in 20-nm-Lg node is predicted by the compact model using the measured variation data.",

author = "T. Matsukawa and S. O'uchi and K. Endo and Y. Ishikawa and H. Yamauchi and Liu, {Y. X.} and J. Tsukada and K. Sakamoto and M. Masahara",

year = "2009",

language = "English",

isbn = "9784863480094",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

pages = "118--119",

booktitle = "2009 Symposium on VLSI Technology, VLSIT 2009",

note = "2009 Symposium on VLSI Technology, VLSIT 2009 ; Conference date: 16-06-2009 Through 18-06-2009",

}

Matsukawa, T, O'uchi, S, Endo, K, Ishikawa, Y, Yamauchi, H, Liu, YX, Tsukada, J, Sakamoto, K & Masahara, M 2009, Comprehensive analysis of variability sources of FinFET characteristics. in 2009 Symposium on VLSI Technology, VLSIT 2009., 5200656, Digest of Technical Papers - Symposium on VLSI Technology, pp. 118-119, 2009 Symposium on VLSI Technology, VLSIT 2009, Kyoto, Japan, 09/6/16.

TY - GEN

T1 - Comprehensive analysis of variability sources of FinFET characteristics

AU - Matsukawa, T.

AU - O'uchi, S.

AU - Endo, K.

AU - Ishikawa, Y.

AU - Yamauchi, H.

AU - Liu, Y. X.

AU - Tsukada, J.

AU - Sakamoto, K.

AU - Masahara, M.

PY - 2009

Y1 - 2009

N2 - FinFET performance variability is comprehensively investigated for undoped/doped channels with various gate materials. By evaluating the influence of channel doping, fluctuation of gate length and that of fin thickness, it is found that gate workfunction variation (WFV) is the dominant source of V t variation for the undoped FinFET and that the WFV increases with scaling of gate area. In addition, it is demonstrated that the extension doping optimization successfully reduces the variation of parasitic resistance (R p) due to fin thickness fluctuation as well as Rp itself. FinFET-SRAM performance in 20-nm-Lg node is predicted by the compact model using the measured variation data.

AB - FinFET performance variability is comprehensively investigated for undoped/doped channels with various gate materials. By evaluating the influence of channel doping, fluctuation of gate length and that of fin thickness, it is found that gate workfunction variation (WFV) is the dominant source of V t variation for the undoped FinFET and that the WFV increases with scaling of gate area. In addition, it is demonstrated that the extension doping optimization successfully reduces the variation of parasitic resistance (R p) due to fin thickness fluctuation as well as Rp itself. FinFET-SRAM performance in 20-nm-Lg node is predicted by the compact model using the measured variation data.

UR - http://www.scopus.com/inward/record.url?scp=71049186856&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=71049186856&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:71049186856

SN - 9784863480094

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - 118

EP - 119

BT - 2009 Symposium on VLSI Technology, VLSIT 2009

T2 - 2009 Symposium on VLSI Technology, VLSIT 2009

Y2 - 16 June 2009 through 18 June 2009

ER -

Comprehensive analysis of variability sources of FinFET characteristics

Abstract

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