Comprehensive analysis of variability sources of FinFET characteristics

T. Matsukawa, S. O'uchi, K. Endo, Y. Ishikawa, H. Yamauchi, Y. X. Liu, J. Tsukada, K. Sakamoto, M. Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

144 Citations (Scopus)


FinFET performance variability is comprehensively investigated for undoped/doped channels with various gate materials. By evaluating the influence of channel doping, fluctuation of gate length and that of fin thickness, it is found that gate workfunction variation (WFV) is the dominant source of V t variation for the undoped FinFET and that the WFV increases with scaling of gate area. In addition, it is demonstrated that the extension doping optimization successfully reduces the variation of parasitic resistance (R p) due to fin thickness fluctuation as well as Rp itself. FinFET-SRAM performance in 20-nm-Lg node is predicted by the compact model using the measured variation data.

Original languageEnglish
Title of host publication2009 Symposium on VLSI Technology, VLSIT 2009
Number of pages2
Publication statusPublished - 2009
Event2009 Symposium on VLSI Technology, VLSIT 2009 - Kyoto, Japan
Duration: 2009 Jun 162009 Jun 18

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562


Conference2009 Symposium on VLSI Technology, VLSIT 2009


Dive into the research topics of 'Comprehensive analysis of variability sources of FinFET characteristics'. Together they form a unique fingerprint.

Cite this