We study characteristics of CoFeB-MgO magnetic tunnel junction with perpendicular easy-axis (p-MTJ) at a reduced dimension down to 1X nm fabricated by hard-mask process. CoFeB-MgO p-MTJ with double-interface shows higher thermal stability down to 1X nm than that with single-interface. Thermal stability factor of 58 and intrinsic critical current of 24 μA are obtained in the CoFeB-MgO magnetic tunnel junction with perpendicular easy-axis using double-interface structure at a diameter of 20 nmφ.
|Title of host publication||2013 IEEE International Electron Devices Meeting, IEDM 2013|
|Publication status||Published - 2013|
|Event||2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States|
Duration: 2013 Dec 9 → 2013 Dec 11
|Name||Technical Digest - International Electron Devices Meeting, IEDM|
|Conference||2013 IEEE International Electron Devices Meeting, IEDM 2013|
|Period||13/12/9 → 13/12/11|