Abstract
To predict the secondary electron emission coefficient (γ value) for Xe+, the reasonable treatment of surface trap levels is required. Then we introduced two characters of surface traps into the computational γ estimation method. The estimated γ values agreed with experimental results quantitatively. A larger number of trapped electrons can increase the γ value because they possess higher energy than valence electrons. Additionally, we suggest that wall charges on protecting layer surface should relate to the trap density and hence γ value.
Original language | English |
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Pages | 1949-1952 |
Number of pages | 4 |
Publication status | Published - 2009 |
Event | 16th International Display Workshops, IDW '09 - Miyazaki, Japan Duration: 2009 Dec 9 → 2009 Dec 11 |
Conference
Conference | 16th International Display Workshops, IDW '09 |
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Country/Territory | Japan |
City | Miyazaki |
Period | 09/12/9 → 09/12/11 |