Abstract
We have developed a way to map out concurrently the in-plane lattice constant of a heteroepitaxial thin film with a spatial resolution of 0.1 mm by using concurrent x-ray diffractometer equipped with a convergent x-ray source and two-dimensional detector. Spatial distribution of heteroepitaxial strain is analyzed for a (BaxSr1-x)TiO3 composition-spread thin film grown on a SrTiO3 substrate. As x increases, elastic deformation caused by compressive stress due to the lattice mismatch forces the lattice of the film to be coherent with that of the substrate until a critical point of x=0.6, above which the film lattice relaxes. By just taking three snap shots of x-ray diffraction image at a symmetric and two asymmetric diffraction configurations, such useful information inherent in heteroepitaxy can be revealed.
Original language | English |
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Pages (from-to) | 2066-2068 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 80 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2002 Mar 25 |