Condition of Si crystal formation by vaporizing Na from NaSi

Haruhiko Morito; Taiki Karahashi; Hisanori Yamane

doi:10.1016/j.jcrysgro.2012.06.032

Condition of Si crystal formation by vaporizing Na from NaSi

Haruhiko Morito, Taiki Karahashi, Hisanori Yamane

Tohoku University

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

NaSi was heated at various Na vapor pressures (p _Na 0.1-1.2 atm) and temperatures (973-1173 K) to investigate the condition of Si crystal formation from NaSi by Na evaporation. Silicon single crystals 1-3 mm in diameter were grown by evaporation of Na from Na-Si melt at 1173 K and p _Na=0.74 atm.

Original language	English
Pages (from-to)	109-112
Number of pages	4
Journal	Journal of Crystal Growth
Volume	355
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2012.06.032
Publication status	Published - 2012 Sept 15

Keywords

A1. Phase diagrams
A2. Growth from solutions
A2. Single crystal growth
B1. Silicon
B1. Sodium silicide

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10.1016/j.jcrysgro.2012.06.032

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title = "Condition of Si crystal formation by vaporizing Na from NaSi",

abstract = "NaSi was heated at various Na vapor pressures (p Na 0.1-1.2 atm) and temperatures (973-1173 K) to investigate the condition of Si crystal formation from NaSi by Na evaporation. Silicon single crystals 1-3 mm in diameter were grown by evaporation of Na from Na-Si melt at 1173 K and p Na=0.74 atm.",

keywords = "A1. Phase diagrams, A2. Growth from solutions, A2. Single crystal growth, B1. Silicon, B1. Sodium silicide",

author = "Haruhiko Morito and Taiki Karahashi and Hisanori Yamane",

note = "Funding Information: This work was supported in part by a Grant-in-Aid for Research Seeds Quest Program (Lower Carbon Society) from the Japan Science and Technology Agency .",

year = "2012",

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doi = "10.1016/j.jcrysgro.2012.06.032",

language = "English",

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journal = "Journal of Crystal Growth",

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T1 - Condition of Si crystal formation by vaporizing Na from NaSi

AU - Morito, Haruhiko

AU - Karahashi, Taiki

AU - Yamane, Hisanori

N1 - Funding Information: This work was supported in part by a Grant-in-Aid for Research Seeds Quest Program (Lower Carbon Society) from the Japan Science and Technology Agency .

PY - 2012/9/15

Y1 - 2012/9/15

N2 - NaSi was heated at various Na vapor pressures (p Na 0.1-1.2 atm) and temperatures (973-1173 K) to investigate the condition of Si crystal formation from NaSi by Na evaporation. Silicon single crystals 1-3 mm in diameter were grown by evaporation of Na from Na-Si melt at 1173 K and p Na=0.74 atm.

AB - NaSi was heated at various Na vapor pressures (p Na 0.1-1.2 atm) and temperatures (973-1173 K) to investigate the condition of Si crystal formation from NaSi by Na evaporation. Silicon single crystals 1-3 mm in diameter were grown by evaporation of Na from Na-Si melt at 1173 K and p Na=0.74 atm.

KW - A1. Phase diagrams

KW - A2. Growth from solutions

KW - A2. Single crystal growth

KW - B1. Silicon

KW - B1. Sodium silicide

UR - http://www.scopus.com/inward/record.url?scp=84864042458&partnerID=8YFLogxK

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DO - 10.1016/j.jcrysgro.2012.06.032

M3 - Article

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SN - 0022-0248

VL - 355

SP - 109

EP - 112

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Condition of Si crystal formation by vaporizing Na from NaSi

Abstract

Keywords

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