Condition of Si crystal formation by vaporizing Na from NaSi

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NaSi was heated at various Na vapor pressures (p Na 0.1-1.2 atm) and temperatures (973-1173 K) to investigate the condition of Si crystal formation from NaSi by Na evaporation. Silicon single crystals 1-3 mm in diameter were grown by evaporation of Na from Na-Si melt at 1173 K and p Na=0.74 atm.

Original languageEnglish
Pages (from-to)109-112
Number of pages4
JournalJournal of Crystal Growth
Issue number1
Publication statusPublished - 2012 Sept 15


  • A1. Phase diagrams
  • A2. Growth from solutions
  • A2. Single crystal growth
  • B1. Silicon
  • B1. Sodium silicide


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