Conditions for seeded growth of GaN crystals by the Na flux method

Masato Aoki; Hisanori Yamane; Masahiko Shimada; Seiji Sarayama; Francis J. DiSalvo

doi:10.1016/S0167-577X(02)00572-4

Conditions for seeded growth of GaN crystals by the Na flux method

Masato Aoki, Hisanori Yamane, Masahiko Shimada, Seiji Sarayama, Francis J. DiSalvo

IMRAM - Division of Inorganic Material Research

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

Conditions for seeded growth of GaN crystals by the Na flux method were investigated. Seeded growth in the Na flux could be achieved under temperature-N₂ pressure conditions between the condition of GaN formation without seeding and the condition of GaN decomposition. GaN single crystals with a maximum area of 3.0 × 1.5 mm² and thickness of 1.0 mm were grown from seeds at 850 °C and 2 MPa of N₂ for 200 h. The crystal growth occurred selectively on the (0001) Ga-polar surface of the platelet seed crystals. The growth rate in the c direction was higher than those of other directions and increased with growth temperature and N₂ pressure. The maximum growth rate in the c direction was about 4 μm/h at 850 °C and 2 MPa of N₂.

Original language	English
Pages (from-to)	660-664
Number of pages	5
Journal	Materials Letters
Volume	56
Issue number	5
DOIs	https://doi.org/10.1016/S0167-577X(02)00572-4
Publication status	Published - 2002 Nov

Keywords

GaN
Growth condition
Seeded growth
Single crystal

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10.1016/S0167-577X(02)00572-4

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@article{ba972696a123487b9e3635d35cfa452d,

title = "Conditions for seeded growth of GaN crystals by the Na flux method",

abstract = "Conditions for seeded growth of GaN crystals by the Na flux method were investigated. Seeded growth in the Na flux could be achieved under temperature-N2 pressure conditions between the condition of GaN formation without seeding and the condition of GaN decomposition. GaN single crystals with a maximum area of 3.0 × 1.5 mm2 and thickness of 1.0 mm were grown from seeds at 850 °C and 2 MPa of N2 for 200 h. The crystal growth occurred selectively on the (0001) Ga-polar surface of the platelet seed crystals. The growth rate in the c direction was higher than those of other directions and increased with growth temperature and N2 pressure. The maximum growth rate in the c direction was about 4 μm/h at 850 °C and 2 MPa of N2.",

keywords = "GaN, Growth condition, Seeded growth, Single crystal",

author = "Masato Aoki and Hisanori Yamane and Masahiko Shimada and Seiji Sarayama and DiSalvo, {Francis J.}",

note = "Funding Information: We are grateful to Nippon Soda for a gift of high-purity Na. We also thank S. Sasaki for taking X-ray Laue photographs. This work was supported in part by a grant from the Ministry of Education, Culture, Sports, Science and Technology.",

year = "2002",

month = nov,

doi = "10.1016/S0167-577X(02)00572-4",

language = "English",

volume = "56",

pages = "660--664",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier",

number = "5",

}

TY - JOUR

T1 - Conditions for seeded growth of GaN crystals by the Na flux method

AU - Aoki, Masato

AU - Yamane, Hisanori

AU - Shimada, Masahiko

AU - Sarayama, Seiji

AU - DiSalvo, Francis J.

N1 - Funding Information: We are grateful to Nippon Soda for a gift of high-purity Na. We also thank S. Sasaki for taking X-ray Laue photographs. This work was supported in part by a grant from the Ministry of Education, Culture, Sports, Science and Technology.

PY - 2002/11

Y1 - 2002/11

N2 - Conditions for seeded growth of GaN crystals by the Na flux method were investigated. Seeded growth in the Na flux could be achieved under temperature-N2 pressure conditions between the condition of GaN formation without seeding and the condition of GaN decomposition. GaN single crystals with a maximum area of 3.0 × 1.5 mm2 and thickness of 1.0 mm were grown from seeds at 850 °C and 2 MPa of N2 for 200 h. The crystal growth occurred selectively on the (0001) Ga-polar surface of the platelet seed crystals. The growth rate in the c direction was higher than those of other directions and increased with growth temperature and N2 pressure. The maximum growth rate in the c direction was about 4 μm/h at 850 °C and 2 MPa of N2.

AB - Conditions for seeded growth of GaN crystals by the Na flux method were investigated. Seeded growth in the Na flux could be achieved under temperature-N2 pressure conditions between the condition of GaN formation without seeding and the condition of GaN decomposition. GaN single crystals with a maximum area of 3.0 × 1.5 mm2 and thickness of 1.0 mm were grown from seeds at 850 °C and 2 MPa of N2 for 200 h. The crystal growth occurred selectively on the (0001) Ga-polar surface of the platelet seed crystals. The growth rate in the c direction was higher than those of other directions and increased with growth temperature and N2 pressure. The maximum growth rate in the c direction was about 4 μm/h at 850 °C and 2 MPa of N2.

KW - GaN

KW - Growth condition

KW - Seeded growth

KW - Single crystal

UR - http://www.scopus.com/inward/record.url?scp=0036828185&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036828185&partnerID=8YFLogxK

U2 - 10.1016/S0167-577X(02)00572-4

DO - 10.1016/S0167-577X(02)00572-4

M3 - Article

AN - SCOPUS:0036828185

SN - 0167-577X

VL - 56

SP - 660

EP - 664

JO - Materials Letters

JF - Materials Letters

IS - 5

ER -

Conditions for seeded growth of GaN crystals by the Na flux method

Abstract

Keywords

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