TY - JOUR
T1 - Conductance anisotropy of high-mobility, modulation-doped GaAs single quantum wells
AU - Friedland, K. J.
AU - Hey, R.
AU - Bierwagen, O.
AU - Kostial, H.
AU - Hirayama, Y.
AU - Ploog, K. H.
PY - 2002/3
Y1 - 2002/3
N2 - The conductance in high-mobility and high-density, modulation-doped GaAs single quantum wells on GaAs(0 0 1) substrates with thin spacer layers is strongly anisotropic with a 2-3 times higher mobility in the [1̄ 1 0] than that in the [1 1 0] direction. We show that the anisotropic scattering potential is strongly influenced by additional X-like electrons in the barriers formed by short-period superlattices. The X-electrons are able to considerably smooth the fluctuations of the potential; thus, increasing the correlation length of the fluctuations. We investigate the correlation length of the potential fluctuations by oscillations in the low-field magnetoresistance.
AB - The conductance in high-mobility and high-density, modulation-doped GaAs single quantum wells on GaAs(0 0 1) substrates with thin spacer layers is strongly anisotropic with a 2-3 times higher mobility in the [1̄ 1 0] than that in the [1 1 0] direction. We show that the anisotropic scattering potential is strongly influenced by additional X-like electrons in the barriers formed by short-period superlattices. The X-electrons are able to considerably smooth the fluctuations of the potential; thus, increasing the correlation length of the fluctuations. We investigate the correlation length of the potential fluctuations by oscillations in the low-field magnetoresistance.
KW - Anisotropic magnetotransport
KW - High mobility two-dimensional electrons
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U2 - 10.1016/S1386-9477(02)00207-2
DO - 10.1016/S1386-9477(02)00207-2
M3 - Article
AN - SCOPUS:0036492838
SN - 1386-9477
VL - 13
SP - 642
EP - 645
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
IS - 2-4
ER -