The conductance in high-mobility and high-density, modulation-doped GaAs single quantum wells on GaAs(0 0 1) substrates with thin spacer layers is strongly anisotropic with a 2-3 times higher mobility in the [1̄ 1 0] than that in the [1 1 0] direction. We show that the anisotropic scattering potential is strongly influenced by additional X-like electrons in the barriers formed by short-period superlattices. The X-electrons are able to considerably smooth the fluctuations of the potential; thus, increasing the correlation length of the fluctuations. We investigate the correlation length of the potential fluctuations by oscillations in the low-field magnetoresistance.
|Number of pages||4|
|Journal||Physica E: Low-Dimensional Systems and Nanostructures|
|Publication status||Published - 2002 Mar|
- Anisotropic magnetotransport
- High mobility two-dimensional electrons