Conductance quantisation in an induced hole quantum wire

O. Klochan, W. R. Clarke, R. Danneau, A. P. Micolich, L. H. Ho, A. R. Hamilton, K. Muraki, Y. Hirayama

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We have fabricated and studied a ballistic one-dimensional p-type quantum wire using an undoped AlGaAs/GaAs structure. The absence of modulation doping eliminates long-range disorder potential scattering and allows high carrier mobilities to be achieved over a wide range of hole densities, and in particular, at very low densities where carrier-carrier interactions are strongest. The device exhibits clear quantised conductance plateaus with highly stable gate characteristics.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages681-682
Number of pages2
DOIs
Publication statusPublished - 2007
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: 2006 Jul 242006 Jul 28

Publication series

NameAIP Conference Proceedings
Volume893
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference28th International Conference on the Physics of Semiconductors, ICPS 2006
Country/TerritoryAustria
CityVienna
Period06/7/2406/7/28

Keywords

  • Holes
  • Quantum wire
  • Undoped heterostructure

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