Conducting Si-doped γ-Ga2O3 epitaxial films grown by pulsed-laser deposition

Takayoshi Oshima; Keitaro Matsuyama; Kohei Yoshimatsu; Akira Ohtomo

doi:10.1016/j.jcrysgro.2015.04.011

Conducting Si-doped γ-Ga₂O₃ epitaxial films grown by pulsed-laser deposition

Takayoshi Oshima, Keitaro Matsuyama, Kohei Yoshimatsu, Akira Ohtomo

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

We report structural, electrical, and optical properties of Si-doped γ-Ga₂O₃ films epitaxially grown on (100) MgAl₂O₄ substrate by pulsed-laser deposition. The γ-Ga₂O₃:Si films of a metastable spinel phase had neither secondary phase nor rotation domain. A highly doped film exhibited n-type conductivity with a carrier concentration of 1.8×10¹⁹ cm^-3 and a Hall mobility of 1.6 cm² V^-1 s^-1 at 300 K. Donor activation energy was estimated to be less than 7 meV from nearly temperature-independent transport properties down to 77 K. The successful impurity doping indicates that γ-Ga₂O₃ can be used as an n-type wide-band-gap semiconductor.

Original language	English
Pages (from-to)	23-26
Number of pages	4
Journal	Journal of Crystal Growth
Volume	421
DOIs	https://doi.org/10.1016/j.jcrysgro.2015.04.011
Publication status	Published - 2015 Jul 1
Externally published	Yes

Keywords

A1. Doping
A3. Pulsed-laser deposition
B1. γ-GaO
B2. Semiconducting gallium compounds

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2015.04.011

Cite this

@article{5e72625bf77e46bf83374933b2fa3b78,

title = "Conducting Si-doped γ-Ga2O3 epitaxial films grown by pulsed-laser deposition",

abstract = "We report structural, electrical, and optical properties of Si-doped γ-Ga2O3 films epitaxially grown on (100) MgAl2O4 substrate by pulsed-laser deposition. The γ-Ga2O3:Si films of a metastable spinel phase had neither secondary phase nor rotation domain. A highly doped film exhibited n-type conductivity with a carrier concentration of 1.8×1019 cm-3 and a Hall mobility of 1.6 cm2 V-1 s-1 at 300 K. Donor activation energy was estimated to be less than 7 meV from nearly temperature-independent transport properties down to 77 K. The successful impurity doping indicates that γ-Ga2O3 can be used as an n-type wide-band-gap semiconductor.",

keywords = "A1. Doping, A3. Pulsed-laser deposition, B1. γ-GaO, B2. Semiconducting gallium compounds",

author = "Takayoshi Oshima and Keitaro Matsuyama and Kohei Yoshimatsu and Akira Ohtomo",

note = "Funding Information: This work was supported by a JSPS Grant-in-Aid for Scientific Research , MEXT the Element Strategy initiative Project, and a research grant from Hitachi Metals Materials Science Foundation. Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.",

year = "2015",

month = jul,

day = "1",

doi = "10.1016/j.jcrysgro.2015.04.011",

language = "English",

volume = "421",

pages = "23--26",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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TY - JOUR

T1 - Conducting Si-doped γ-Ga2O3 epitaxial films grown by pulsed-laser deposition

AU - Oshima, Takayoshi

AU - Matsuyama, Keitaro

AU - Yoshimatsu, Kohei

AU - Ohtomo, Akira

N1 - Funding Information: This work was supported by a JSPS Grant-in-Aid for Scientific Research , MEXT the Element Strategy initiative Project, and a research grant from Hitachi Metals Materials Science Foundation. Publisher Copyright: © 2015 Elsevier B.V.

PY - 2015/7/1

Y1 - 2015/7/1

N2 - We report structural, electrical, and optical properties of Si-doped γ-Ga2O3 films epitaxially grown on (100) MgAl2O4 substrate by pulsed-laser deposition. The γ-Ga2O3:Si films of a metastable spinel phase had neither secondary phase nor rotation domain. A highly doped film exhibited n-type conductivity with a carrier concentration of 1.8×1019 cm-3 and a Hall mobility of 1.6 cm2 V-1 s-1 at 300 K. Donor activation energy was estimated to be less than 7 meV from nearly temperature-independent transport properties down to 77 K. The successful impurity doping indicates that γ-Ga2O3 can be used as an n-type wide-band-gap semiconductor.

AB - We report structural, electrical, and optical properties of Si-doped γ-Ga2O3 films epitaxially grown on (100) MgAl2O4 substrate by pulsed-laser deposition. The γ-Ga2O3:Si films of a metastable spinel phase had neither secondary phase nor rotation domain. A highly doped film exhibited n-type conductivity with a carrier concentration of 1.8×1019 cm-3 and a Hall mobility of 1.6 cm2 V-1 s-1 at 300 K. Donor activation energy was estimated to be less than 7 meV from nearly temperature-independent transport properties down to 77 K. The successful impurity doping indicates that γ-Ga2O3 can be used as an n-type wide-band-gap semiconductor.

KW - A1. Doping

KW - A3. Pulsed-laser deposition

KW - B1. γ-GaO

KW - B2. Semiconducting gallium compounds

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JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

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