Conducting Si-doped γ-Ga2O3 epitaxial films grown by pulsed-laser deposition

Takayoshi Oshima, Keitaro Matsuyama, Kohei Yoshimatsu, Akira Ohtomo

Research output: Contribution to journalArticlepeer-review

37 Citations (Scopus)


We report structural, electrical, and optical properties of Si-doped γ-Ga2O3 films epitaxially grown on (100) MgAl2O4 substrate by pulsed-laser deposition. The γ-Ga2O3:Si films of a metastable spinel phase had neither secondary phase nor rotation domain. A highly doped film exhibited n-type conductivity with a carrier concentration of 1.8×1019 cm-3 and a Hall mobility of 1.6 cm2 V-1 s-1 at 300 K. Donor activation energy was estimated to be less than 7 meV from nearly temperature-independent transport properties down to 77 K. The successful impurity doping indicates that γ-Ga2O3 can be used as an n-type wide-band-gap semiconductor.

Original languageEnglish
Pages (from-to)23-26
Number of pages4
JournalJournal of Crystal Growth
Publication statusPublished - 2015 Jul 1
Externally publishedYes


  • A1. Doping
  • A3. Pulsed-laser deposition
  • B1. γ-GaO
  • B2. Semiconducting gallium compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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