Confined high-mobility electron gas at the Ruddlesden-Popper type heterointerfaces

M. Matvejeff; K. Nishio; R. Takahashi; M. Lippmaa

doi:10.1063/1.3552681

Confined high-mobility electron gas at the Ruddlesden-Popper type heterointerfaces

M. Matvejeff, K. Nishio, R. Takahashi, M. Lippmaa

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We study the transport properties of Ruddlesden-Popper type interfaces grown on SrTiO₃ substrates, showing that in contrast to perovskite-type interfaces, no mobile carriers are observed in the substrate even when La ions of the rocksalt layer are in direct contact with the Ti-terminated surface of SrTiO₃. Annealing at 800 °C and above can, however, be used to perform local chemical doping of the interface by La-ion diffusion into the SrTiO₃ substrate, forming a metallic interface with confined high-mobility carriers. The technique can be used to reliably fabricate δ -doped perovskite quantum wells with sheet carrier densities below 10¹³ cm^-2.

Original language	English
Article number	073105
Journal	Applied Physics Letters
Volume	98
Issue number	7
DOIs	https://doi.org/10.1063/1.3552681
Publication status	Published - 2011 Feb 14

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Confined high-mobility electron gas at the Ruddlesden-Popper type heterointerfaces",

abstract = "We study the transport properties of Ruddlesden-Popper type interfaces grown on SrTiO3 substrates, showing that in contrast to perovskite-type interfaces, no mobile carriers are observed in the substrate even when La ions of the rocksalt layer are in direct contact with the Ti-terminated surface of SrTiO3. Annealing at 800 °C and above can, however, be used to perform local chemical doping of the interface by La-ion diffusion into the SrTiO3 substrate, forming a metallic interface with confined high-mobility carriers. The technique can be used to reliably fabricate δ -doped perovskite quantum wells with sheet carrier densities below 1013 cm-2.",

author = "M. Matvejeff and K. Nishio and R. Takahashi and M. Lippmaa",

note = "Funding Information: This work was supported by NEDO Project No. 07E51002a. M.M. also gratefully acknowledges financial support from Academy of Finland (Decision No. 137 866) and Marubun Research Promotion Foundation. ",

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AU - Matvejeff, M.

AU - Nishio, K.

AU - Takahashi, R.

AU - Lippmaa, M.

N1 - Funding Information: This work was supported by NEDO Project No. 07E51002a. M.M. also gratefully acknowledges financial support from Academy of Finland (Decision No. 137 866) and Marubun Research Promotion Foundation.

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N2 - We study the transport properties of Ruddlesden-Popper type interfaces grown on SrTiO3 substrates, showing that in contrast to perovskite-type interfaces, no mobile carriers are observed in the substrate even when La ions of the rocksalt layer are in direct contact with the Ti-terminated surface of SrTiO3. Annealing at 800 °C and above can, however, be used to perform local chemical doping of the interface by La-ion diffusion into the SrTiO3 substrate, forming a metallic interface with confined high-mobility carriers. The technique can be used to reliably fabricate δ -doped perovskite quantum wells with sheet carrier densities below 1013 cm-2.

AB - We study the transport properties of Ruddlesden-Popper type interfaces grown on SrTiO3 substrates, showing that in contrast to perovskite-type interfaces, no mobile carriers are observed in the substrate even when La ions of the rocksalt layer are in direct contact with the Ti-terminated surface of SrTiO3. Annealing at 800 °C and above can, however, be used to perform local chemical doping of the interface by La-ion diffusion into the SrTiO3 substrate, forming a metallic interface with confined high-mobility carriers. The technique can be used to reliably fabricate δ -doped perovskite quantum wells with sheet carrier densities below 1013 cm-2.

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Confined high-mobility electron gas at the Ruddlesden-Popper type heterointerfaces

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