TY - JOUR
T1 - Conformal deposition of RuO2 on Cu via a galvanic cementation reaction
AU - Lin, Chun
AU - Chou, Shih Cheng
AU - Tso, Kuang Chih
AU - Hsieh, Yi Chieh
AU - Chan, Ting Shan
AU - Chen, Po Chun
AU - Koike, Junichi
AU - Wu, Pu Wei
N1 - Funding Information:
Financial supports from the Ministry of Science and Technology of Taiwan (106-2221-E-009-064; 107-2221-E-009-006-MY3; 107-2633-B-009-003; 107-2218-E-009-011) and Lam Research Corp. are greatly appreciated. In addition, the authors would like to thank the Ministry of Education for the funding to “Center for Neuromodulation Medical Electronics Systems” from the featured areas research center program within the framework of the higher education sprout project.
Publisher Copyright:
© The Author(s) 2019.
PY - 2019
Y1 - 2019
N2 - We develop a seedless wet chemical process to deposit uniform RuO2 on a Cu substrate. Our approach entails the synthesis of volatile RuO4 colloids in a pH 9 aqueous solution from the oxidation of RuCl5 2− by ClO−, followed by a galvanic cementation reaction in which the Cu undergoes a mild oxidation in conjunction with the reduction of RuO4 to produce a dense and conformal RuO2 thin film on the Cu surface. The nature for the chemical reactions and constituents involved are investigated by UV-Vis, X-ray absorption spectroscopy, and X-ray photoelectron spectroscopy. Both as-deposited and annealed RuO2 films are characterized by scanning electron microscope and X-ray diffractometer. The as-deposited RuO2 film, with a thickness of 199 nm, reveals an amorphous structure and after an Ar annealing, becomes crystalline in rutile phase. In between the RuO2 and Cu, there are presence of CuO from the displacement cementation reaction, and Cu2O from the parasitic Cu corrosion as expected from the Pourbaix diagram. These Cu oxides, with a thickness of 330 nm, provide sufficient adhesive bonding between RuO2 and Cu.
AB - We develop a seedless wet chemical process to deposit uniform RuO2 on a Cu substrate. Our approach entails the synthesis of volatile RuO4 colloids in a pH 9 aqueous solution from the oxidation of RuCl5 2− by ClO−, followed by a galvanic cementation reaction in which the Cu undergoes a mild oxidation in conjunction with the reduction of RuO4 to produce a dense and conformal RuO2 thin film on the Cu surface. The nature for the chemical reactions and constituents involved are investigated by UV-Vis, X-ray absorption spectroscopy, and X-ray photoelectron spectroscopy. Both as-deposited and annealed RuO2 films are characterized by scanning electron microscope and X-ray diffractometer. The as-deposited RuO2 film, with a thickness of 199 nm, reveals an amorphous structure and after an Ar annealing, becomes crystalline in rutile phase. In between the RuO2 and Cu, there are presence of CuO from the displacement cementation reaction, and Cu2O from the parasitic Cu corrosion as expected from the Pourbaix diagram. These Cu oxides, with a thickness of 330 nm, provide sufficient adhesive bonding between RuO2 and Cu.
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U2 - 10.1149/2.0061912jes
DO - 10.1149/2.0061912jes
M3 - Article
AN - SCOPUS:85073210079
SN - 0013-4651
VL - 166
SP - D476-D482
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
IS - 10
ER -