CO+NH3 plasma etching for magnetic thin films

Hitoshi Kubota, Kousei Ueda, Yasuo Ando, Terunobu Miyazaki

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


Etching of magnetic thin films has been studied using CO/NH3 plasma with an electron cyclotron resonance plasma source and DC sample bias. Etch rates were proportional to bias power density. The maximum etch rate was 127 nm/min. Both the pressure dependence of Ni-Fe etch rate and the results of appearance mass spectroscopy suggested that the chemical reaction induced by energetic CO molecules enhanced the etch rate.

Original languageEnglish
Pages (from-to)e1421-e1422
JournalJournal of Magnetism and Magnetic Materials
Issue numberSUPPL. 1
Publication statusPublished - 2004 May


  • Appearance mass spectroscopy
  • CO
  • Etching rate
  • Magnetic thin film
  • NH
  • Reactive ion etching


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