Connection characteristics of silicon nanowire waveguides and fabrication of physical contact switches

E. Bulgan, Y. Kanamori, K. Hane

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Citations (Scopus)

Abstract

Optical characteristics of silicon nanowire waveguide connections are studied both theoretically and experimentally. Effects of geometrical sizes and positional alignments on optical performance are investigated. Results show that waveguide connections with tips wider than 500 nm and tip angles greater than critical angle enable high transmittance and less sensitivity to positional misalignments. Connection with 1.5 μm-wide tip at 74° tip angle is experimentally found to yield 96.3% transmittance at 200 nm offset distance. 1x2 mechanical switch using the aforementioned silicon nanowire waveguide geometry is designed and fabricated. Studied results are useful for realizing low-loss microelectromechanically-actuated connections in silicon subwavelength integrated optical circuits in the telecommunication field.

Original languageEnglish
Title of host publicationTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
Pages505-508
Number of pages4
DOIs
Publication statusPublished - 2009
EventTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems - Denver, CO, United States
Duration: 2009 Jun 212009 Jun 25

Publication series

NameTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems

Conference

ConferenceTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
Country/TerritoryUnited States
CityDenver, CO
Period09/6/2109/6/25

Keywords

  • Nanowire waveguide
  • Optical connection
  • Optical switch
  • Physical contact
  • Silicon waveguide

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