Contact doping and ultrathin gate dielectrics for nanoscale organic thin-film transistors

To suppress undesirable short-channel effects in organic transistors with nanoscale lateral dimensions, aggressive gate-dielectric scaling (using an ultra-thin monolayer-based gate dielectric) and area-selective contact doping (using a strong organic dopant) are introduced into organic transistors with channel lengths and gate-to-contact overlaps of about 100 nm. These nanoscale organic transistors have off-state drain currents below 1 pA, on/off current ratios near 10⁷, and clean linear and saturation characteristics.