Contact resistance modulation in carbon nanotube devices investigated by four-probe experiments

Takayoshi Kanbara; Taishi Takenobu; Tetsuo Takahashi; Yoshihiro Iwasa; Kazuhito Tsukagoshi; Yoshinobu Aoyagi; Hiromichi Kataura

doi:10.1063/1.2171481

Contact resistance modulation in carbon nanotube devices investigated by four-probe experiments

Takayoshi Kanbara, Taishi Takenobu, Tetsuo Takahashi, Yoshihiro Iwasa, Kazuhito Tsukagoshi, Yoshinobu Aoyagi, Hiromichi Kataura

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The contact resistance (Rcont) between nanotube and metal electrodes was directly measured in a four-terminal configuration of field-effect transistors for individual single-walled carbon nanotube (SWNT) bundles and a multiwalled carbon nanotube (MWNT). Both Rcont and the nanotube resistance (RNT) in a semiconducting SWNT device drastically changed with gate voltage, while Rcont, being more than one-order smaller than Rcont in metallic SWNTs and MWNTs, was almost constant against the gate voltage. Carriers introduced either by gate voltage or chemical doping induced a rapid decrease in Rcont compared with the resistance of semiconducting SWNTs.

Original language	English
Article number	053118
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	88
Issue number	5
DOIs	https://doi.org/10.1063/1.2171481
Publication status	Published - 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2171481

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title = "Contact resistance modulation in carbon nanotube devices investigated by four-probe experiments",

abstract = "The contact resistance (Rcont) between nanotube and metal electrodes was directly measured in a four-terminal configuration of field-effect transistors for individual single-walled carbon nanotube (SWNT) bundles and a multiwalled carbon nanotube (MWNT). Both Rcont and the nanotube resistance (RNT) in a semiconducting SWNT device drastically changed with gate voltage, while Rcont, being more than one-order smaller than Rcont in metallic SWNTs and MWNTs, was almost constant against the gate voltage. Carriers introduced either by gate voltage or chemical doping induced a rapid decrease in Rcont compared with the resistance of semiconducting SWNTs.",

author = "Takayoshi Kanbara and Taishi Takenobu and Tetsuo Takahashi and Yoshihiro Iwasa and Kazuhito Tsukagoshi and Yoshinobu Aoyagi and Hiromichi Kataura",

note = "Funding Information: This work was supported in part by CREST-JST, a Grant-in-Aid for Scientific Research (16GS50219, 17204022 and 16GS50219) from the Ministry of Education, Culture, Science, Sports, and Culture, Japan, and Grant-in-Aid for JSPS Fellows.",

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T1 - Contact resistance modulation in carbon nanotube devices investigated by four-probe experiments

AU - Kanbara, Takayoshi

AU - Takenobu, Taishi

AU - Takahashi, Tetsuo

AU - Iwasa, Yoshihiro

AU - Tsukagoshi, Kazuhito

AU - Aoyagi, Yoshinobu

AU - Kataura, Hiromichi

N1 - Funding Information: This work was supported in part by CREST-JST, a Grant-in-Aid for Scientific Research (16GS50219, 17204022 and 16GS50219) from the Ministry of Education, Culture, Science, Sports, and Culture, Japan, and Grant-in-Aid for JSPS Fellows.

PY - 2006

Y1 - 2006

N2 - The contact resistance (Rcont) between nanotube and metal electrodes was directly measured in a four-terminal configuration of field-effect transistors for individual single-walled carbon nanotube (SWNT) bundles and a multiwalled carbon nanotube (MWNT). Both Rcont and the nanotube resistance (RNT) in a semiconducting SWNT device drastically changed with gate voltage, while Rcont, being more than one-order smaller than Rcont in metallic SWNTs and MWNTs, was almost constant against the gate voltage. Carriers introduced either by gate voltage or chemical doping induced a rapid decrease in Rcont compared with the resistance of semiconducting SWNTs.

AB - The contact resistance (Rcont) between nanotube and metal electrodes was directly measured in a four-terminal configuration of field-effect transistors for individual single-walled carbon nanotube (SWNT) bundles and a multiwalled carbon nanotube (MWNT). Both Rcont and the nanotube resistance (RNT) in a semiconducting SWNT device drastically changed with gate voltage, while Rcont, being more than one-order smaller than Rcont in metallic SWNTs and MWNTs, was almost constant against the gate voltage. Carriers introduced either by gate voltage or chemical doping induced a rapid decrease in Rcont compared with the resistance of semiconducting SWNTs.

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Contact resistance modulation in carbon nanotube devices investigated by four-probe experiments

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