TY - JOUR
T1 - Continuous-wave operation of m-plane InGaN multiple quantum well laser diodes
AU - Okamoto, Kuniyoshi
AU - Ohta, Hiroaki
AU - Chichibu, Shigefusa F.
AU - Ichihara, Jun
AU - Takasu, Hidemi
PY - 2007/3/9
Y1 - 2007/3/9
N2 - Continuous-wave (CW) operation of nonpolar m-plane InGaN/GaN laser diodes (LDs) with the lasing wavelengths approximately 400 nm was demonstrated. The threshold current was 36 mA (4.0 kA/cm2) for the CW operation [28 mA (3.1 kA/cm2) for pulsed mode], being comparable to that of conventional c-plane violet LDs. Both the LDs with the stripes parallel to a- and c-axes showed TE mode operation, according to the polarization selection rules of the transitions in strained InGaN. The c-axis stripe LDs exhibited lower threshold current density, since the lowest energy transition is allowed. As is the case with the m-plane light emitting diodes fabricated on the free-standing m-plane GaN bulk crystals [Okamoto et al.: Jpn. J. Appl. Phys. 45 (2006) L1197], the LDs shown in this paper did not have distinct dislocations, stacking faults, or macroscopic cracks. Nonpolar m-plane GaN-based materials are coming into general use.
AB - Continuous-wave (CW) operation of nonpolar m-plane InGaN/GaN laser diodes (LDs) with the lasing wavelengths approximately 400 nm was demonstrated. The threshold current was 36 mA (4.0 kA/cm2) for the CW operation [28 mA (3.1 kA/cm2) for pulsed mode], being comparable to that of conventional c-plane violet LDs. Both the LDs with the stripes parallel to a- and c-axes showed TE mode operation, according to the polarization selection rules of the transitions in strained InGaN. The c-axis stripe LDs exhibited lower threshold current density, since the lowest energy transition is allowed. As is the case with the m-plane light emitting diodes fabricated on the free-standing m-plane GaN bulk crystals [Okamoto et al.: Jpn. J. Appl. Phys. 45 (2006) L1197], the LDs shown in this paper did not have distinct dislocations, stacking faults, or macroscopic cracks. Nonpolar m-plane GaN-based materials are coming into general use.
KW - GaN bulk substrate
KW - InGaN
KW - Laser diode
KW - Nonpolar
KW - Polarized light
KW - m-plane
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U2 - 10.1143/JJAP.46.L187
DO - 10.1143/JJAP.46.L187
M3 - Article
AN - SCOPUS:34250652683
SN - 0021-4922
VL - 46
SP - L187-L189
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 8-11
ER -
