Continuous-wave operation of ZnSe-based laser diodes homoepitaxially grown on semi-insulating ZnSe substrates

A. Ohki; T. Ohno; T. Matsuoka; Y. Ichimura

doi:10.1049/el:19970624

Continuous-wave operation of ZnSe-based laser diodes homoepitaxially grown on semi-insulating ZnSe substrates

A. Ohki, T. Ohno, T. Matsuoka, Y. Ichimura

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Room temperature continuous-wave (CW) operation of a ZnSe-based blue-green laser diode, homo-epitaxially grown on semiinsulating ZnSe substrates, has been achieved. The threshold current and operation voltage under a CW electrical bias were 84mA and 15V, respectively. Under a pulsed electrical bias, lasing was achieved at up to 348 K. The characteristic temperature (T₀) was 140K between 253 and 318K.

Original language	English
Pages (from-to)	990-991
Number of pages	2
Journal	Electronics Letters
Volume	33
Issue number	11
DOIs	https://doi.org/10.1049/el:19970624
Publication status	Published - 1997 May 22
Externally published	Yes

Keywords

Diodes
Semiconductor growth
Semiconductor junction lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19970624

Cite this

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title = "Continuous-wave operation of ZnSe-based laser diodes homoepitaxially grown on semi-insulating ZnSe substrates",

abstract = "Room temperature continuous-wave (CW) operation of a ZnSe-based blue-green laser diode, homo-epitaxially grown on semiinsulating ZnSe substrates, has been achieved. The threshold current and operation voltage under a CW electrical bias were 84mA and 15V, respectively. Under a pulsed electrical bias, lasing was achieved at up to 348 K. The characteristic temperature (T0) was 140K between 253 and 318K.",

keywords = "Diodes, Semiconductor growth, Semiconductor junction lasers",

author = "A. Ohki and T. Ohno and T. Matsuoka and Y. Ichimura",

year = "1997",

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doi = "10.1049/el:19970624",

language = "English",

volume = "33",

pages = "990--991",

journal = "Electronics Letters",

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publisher = "Institution of Engineering and Technology",

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T1 - Continuous-wave operation of ZnSe-based laser diodes homoepitaxially grown on semi-insulating ZnSe substrates

AU - Ohki, A.

AU - Ohno, T.

AU - Matsuoka, T.

AU - Ichimura, Y.

PY - 1997/5/22

Y1 - 1997/5/22

N2 - Room temperature continuous-wave (CW) operation of a ZnSe-based blue-green laser diode, homo-epitaxially grown on semiinsulating ZnSe substrates, has been achieved. The threshold current and operation voltage under a CW electrical bias were 84mA and 15V, respectively. Under a pulsed electrical bias, lasing was achieved at up to 348 K. The characteristic temperature (T0) was 140K between 253 and 318K.

AB - Room temperature continuous-wave (CW) operation of a ZnSe-based blue-green laser diode, homo-epitaxially grown on semiinsulating ZnSe substrates, has been achieved. The threshold current and operation voltage under a CW electrical bias were 84mA and 15V, respectively. Under a pulsed electrical bias, lasing was achieved at up to 348 K. The characteristic temperature (T0) was 140K between 253 and 318K.

KW - Diodes

KW - Semiconductor growth

KW - Semiconductor junction lasers

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U2 - 10.1049/el:19970624

DO - 10.1049/el:19970624

M3 - Article

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SN - 0013-5194

VL - 33

SP - 990

EP - 991

JO - Electronics Letters

JF - Electronics Letters

IS - 11

ER -

Continuous-wave operation of ZnSe-based laser diodes homoepitaxially grown on semi-insulating ZnSe substrates

Abstract

Keywords

ASJC Scopus subject areas

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