TY - JOUR
T1 - Control of doping by matrix in few-layer graphene/ metal oxide composites with highly enhanced electrical conductivity
AU - Fan, Yuchi
AU - Kang, Lijing
AU - Zhou, Weiwei
AU - Jiang, Wan
AU - Wang, Lianjun
AU - Kawasaki, Akira
N1 - Funding Information:
This work was mainly supported by the Japan Society for the Promotion of Science (JSPS) under the Research Fellowship for Young Scientists. This work was also supported by Natural Science Foundation of China (No. 51432004 ), Shanghai Committee of Science and Technology (No. 13NM1400101 ), Program for Shanghai Committee of Science and Technology (No. 13NM1400101 ), “Shu Guang” project supported by Shanghai Municipal Education Commission and Shanghai Education Development Foundation (No. 11SG34 ), Shanghai Rising-Star Program (No. 12QH1400100 ), Specialized Research Fund for the Doctoral Program of Higher Education (No. 20110075110007 ), PCSIRT (No. IRT1221 ), the Fundamental Research Funds for the Central Universities , and DHU Distinguished Young Professor Program . The authors would like to thank Professor Ming-Wei Chen in WPI Advanced Institute for Materials Research of Tohoku University, Associate Professor Naoyuki Nomura, Dr. Keiko Kikuchi in Kawasaki Laboratory for their generous help. Acknowledgement is given to Dr. Takamichi Miyazaki for his sophisticated skill in TEM.
Publisher Copyright:
© 2014 Elsevier Ltd. All rights reserved.
PY - 2015
Y1 - 2015
N2 - Doping of graphene by contacting other materials has significant meaning to the graphene based devices and composites. In this work, highly conducting few-layer graphene (FLG) based composites in which the doping type and level can be manipulated by incorporating FLG with different matrixes are fabricated. Three metal oxides with different level of oxygen vacancies (a-Al2O3, 3%mol yttria stabilized zirconia (3YSZ) and 8%mol yttria stabilized zirconia (8YSZ)) are selected as matrix material. While the electrical conductivity is largely enhanced to 1.4 × 103-2.1 × 103 Sm-1 in the composites by adding 4.42-5.1 vol.% FLG, holedoping level in composites increases in the sequence of FLG/Al2O3 < FLG/3YSZ < FLG/ 8YSZ from room temperature to moderate temperature, as indicated by thermopower measurement and calculation. It is deduced that the concentration of oxygen vacancy on the surface of oxides plays an important role for tuning the hole-doping level in FLG and the control of doping can be realized accordingly.
AB - Doping of graphene by contacting other materials has significant meaning to the graphene based devices and composites. In this work, highly conducting few-layer graphene (FLG) based composites in which the doping type and level can be manipulated by incorporating FLG with different matrixes are fabricated. Three metal oxides with different level of oxygen vacancies (a-Al2O3, 3%mol yttria stabilized zirconia (3YSZ) and 8%mol yttria stabilized zirconia (8YSZ)) are selected as matrix material. While the electrical conductivity is largely enhanced to 1.4 × 103-2.1 × 103 Sm-1 in the composites by adding 4.42-5.1 vol.% FLG, holedoping level in composites increases in the sequence of FLG/Al2O3 < FLG/3YSZ < FLG/ 8YSZ from room temperature to moderate temperature, as indicated by thermopower measurement and calculation. It is deduced that the concentration of oxygen vacancy on the surface of oxides plays an important role for tuning the hole-doping level in FLG and the control of doping can be realized accordingly.
UR - http://www.scopus.com/inward/record.url?scp=84922722425&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84922722425&partnerID=8YFLogxK
U2 - 10.1016/j.carbon.2014.09.027
DO - 10.1016/j.carbon.2014.09.027
M3 - Article
AN - SCOPUS:84922722425
SN - 0008-6223
VL - 81
SP - 83
EP - 90
JO - Carbon
JF - Carbon
IS - 1
ER -