Nitrogen ions (N2+) with 62 keV have been implanted into 100-nm thick films prepared by evaporation of Ti on thermally cleaned NaCl substrates held at room temperature (RT) and 250 °C. Unimplanted and N-implanted Ti films have been examined mainly by transmission electron microscopy. The evaporated films grown at RT consisted of (03·5)- and (2̄1·0)-oriented hcp-Ti, and (110)-oriented CaF2-type TiHx. The N-implantation into the (03·5)-oriented hcp-Ti and (110)-oriented TiHx, results in the epitaxial growth of the (001)- and (110)-oriented TiNy, respectively, whereas nitriding of the (2̄1·0)-oriented hcp-Ti gives rise to the growth of (110)-oriented TiNy rotated by approximately 9° with respect to that grown from the (110)-oriented TiHx. On the other hand, the Ti films grown at 250 °C consisted of only the (03·5)-oriented hcp-Ti. It has been clearly shown that only the (001)-oriented TiNy film is epitaxially grown by N-implantation into the as-grown (03·5)-oriented hcp-Ti. The control of epitaxial orientation of the TiNy films grown by N-implantation and nitriding mechanism of epitaxial Ti thin films are discussed.
|Number of pages||8|
|Journal||Applied Surface Science|
|Publication status||Published - 1998|
|Event||Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 - Tokyo, Jpn|
Duration: 1997 Oct 27 → 1997 Oct 30