TY - JOUR
T1 - Control of epitaxial orientation of TiN thin films grown by N-implantation
AU - Kasukabe, Y.
AU - Ito, A.
AU - Nagata, S.
AU - Kishimoto, M.
AU - Fujino, Y.
AU - Yamaguchi, S.
AU - Yamada, Y.
PY - 1998
Y1 - 1998
N2 - Nitrogen ions (N2+) with 62 keV have been implanted into 100-nm thick films prepared by evaporation of Ti on thermally cleaned NaCl substrates held at room temperature (RT) and 250 °C. Unimplanted and N-implanted Ti films have been examined mainly by transmission electron microscopy. The evaporated films grown at RT consisted of (03·5)- and (2̄1·0)-oriented hcp-Ti, and (110)-oriented CaF2-type TiHx. The N-implantation into the (03·5)-oriented hcp-Ti and (110)-oriented TiHx, results in the epitaxial growth of the (001)- and (110)-oriented TiNy, respectively, whereas nitriding of the (2̄1·0)-oriented hcp-Ti gives rise to the growth of (110)-oriented TiNy rotated by approximately 9° with respect to that grown from the (110)-oriented TiHx. On the other hand, the Ti films grown at 250 °C consisted of only the (03·5)-oriented hcp-Ti. It has been clearly shown that only the (001)-oriented TiNy film is epitaxially grown by N-implantation into the as-grown (03·5)-oriented hcp-Ti. The control of epitaxial orientation of the TiNy films grown by N-implantation and nitriding mechanism of epitaxial Ti thin films are discussed.
AB - Nitrogen ions (N2+) with 62 keV have been implanted into 100-nm thick films prepared by evaporation of Ti on thermally cleaned NaCl substrates held at room temperature (RT) and 250 °C. Unimplanted and N-implanted Ti films have been examined mainly by transmission electron microscopy. The evaporated films grown at RT consisted of (03·5)- and (2̄1·0)-oriented hcp-Ti, and (110)-oriented CaF2-type TiHx. The N-implantation into the (03·5)-oriented hcp-Ti and (110)-oriented TiHx, results in the epitaxial growth of the (001)- and (110)-oriented TiNy, respectively, whereas nitriding of the (2̄1·0)-oriented hcp-Ti gives rise to the growth of (110)-oriented TiNy rotated by approximately 9° with respect to that grown from the (110)-oriented TiHx. On the other hand, the Ti films grown at 250 °C consisted of only the (03·5)-oriented hcp-Ti. It has been clearly shown that only the (001)-oriented TiNy film is epitaxially grown by N-implantation into the as-grown (03·5)-oriented hcp-Ti. The control of epitaxial orientation of the TiNy films grown by N-implantation and nitriding mechanism of epitaxial Ti thin films are discussed.
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U2 - 10.1016/S0169-4332(98)00132-9
DO - 10.1016/S0169-4332(98)00132-9
M3 - Conference article
AN - SCOPUS:0032094716
SN - 0169-4332
VL - 130-132
SP - 643
EP - 650
JO - Applied Surface Science
JF - Applied Surface Science
T2 - Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4
Y2 - 27 October 1997 through 30 October 1997
ER -