Control of flat band voltage by partial incorporation of La 2O3 or Sc2O3 into HfO2 in metal/HfO2/SiO2/Si MOS capacitors

M. Adachi; K. Okamoto; K. Kakushima; P. Ahmet; K. Tsutsui; N. Sugii; T. Hattori; H. Iwai

doi:10.1149/1.2779557

Control of flat band voltage by partial incorporation of La ₂O₃ or Sc₂O₃ into HfO₂ in metal/HfO₂/SiO₂/Si MOS capacitors

M. Adachi, K. Okamoto, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

High-k/SiO₂ interfacial properties are most critical factors determining the high-k gate MOSFET characteristics. We fabricated MOS capacitors of metal/HfO₂/SiO₂/Si structures in which were contained in the HfO₂ layer. Flat-band voltage (V_FB) shifts were measured by changing composition in metal/HfO₂/(HfO₂) _1-x(La₂O₃)_x/SiO₂/Si and metal/HfO₂/(HfO₂)_1-x. (Sc₂O ₃)_x/SiO₂/Si structures. It was found that V_FB shift arises mainly from high-k/SiO₂ interface rather than metal/high-k interface. V_FB could be effectively controlled by incorporating La₂O₃ or Sc₂O₃ near the high-k/SiO₂ interface.

Original language	English
Title of host publication	ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks
Publisher	Electrochemical Society Inc.
Pages	157-167
Number of pages	11
Edition	4
ISBN (Electronic)	9781566775700
ISBN (Print)	9781566775700
DOIs	https://doi.org/10.1149/1.2779557
Publication status	Published - 2007
Externally published	Yes
Event	5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, United States Duration: 2007 Oct 8 → 2007 Oct 10

Publication series

Name	ECS Transactions
Number	4
Volume	11
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting
Country/Territory	United States
City	Washington, DC
Period	07/10/8 → 07/10/10

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.2779557

Cite this

Adachi, M., Okamoto, K., Kakushima, K., Ahmet, P., Tsutsui, K., Sugii, N., Hattori, T., & Iwai, H. (2007). Control of flat band voltage by partial incorporation of La ₂O₃ or Sc₂O₃ into HfO₂ in metal/HfO₂/SiO₂/Si MOS capacitors. In ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks (4 ed., pp. 157-167). (ECS Transactions; Vol. 11, No. 4). Electrochemical Society Inc.. https://doi.org/10.1149/1.2779557

Control of flat band voltage by partial incorporation of La ₂O₃ or Sc₂O₃ into HfO₂ in metal/HfO₂/SiO₂/Si MOS capacitors. / Adachi, M.; Okamoto, K.; Kakushima, K. et al.

ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks. 4. ed. Electrochemical Society Inc., 2007. p. 157-167 (ECS Transactions; Vol. 11, No. 4).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Adachi, M, Okamoto, K, Kakushima, K, Ahmet, P, Tsutsui, K, Sugii, N, Hattori, T & Iwai, H 2007, Control of flat band voltage by partial incorporation of La ₂O₃ or Sc₂O₃ into HfO₂ in metal/HfO₂/SiO₂/Si MOS capacitors. in ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks. 4 edn, ECS Transactions, no. 4, vol. 11, Electrochemical Society Inc., pp. 157-167, 5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting, Washington, DC, United States, 07/10/8. https://doi.org/10.1149/1.2779557

Adachi M, Okamoto K, Kakushima K, Ahmet P, Tsutsui K, Sugii N et al. Control of flat band voltage by partial incorporation of La ₂O₃ or Sc₂O₃ into HfO₂ in metal/HfO₂/SiO₂/Si MOS capacitors. In ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks. 4 ed. Electrochemical Society Inc. 2007. p. 157-167. (ECS Transactions; 4). doi: 10.1149/1.2779557

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title = "Control of flat band voltage by partial incorporation of La 2O3 or Sc2O3 into HfO2 in metal/HfO2/SiO2/Si MOS capacitors",

abstract = "High-k/SiO2 interfacial properties are most critical factors determining the high-k gate MOSFET characteristics. We fabricated MOS capacitors of metal/HfO2/SiO2/Si structures in which were contained in the HfO2 layer. Flat-band voltage (VFB) shifts were measured by changing composition in metal/HfO2/(HfO2) 1-x(La2O3)x/SiO2/Si and metal/HfO2/(HfO2)1-x. (Sc2O 3)x/SiO2/Si structures. It was found that VFB shift arises mainly from high-k/SiO2 interface rather than metal/high-k interface. VFB could be effectively controlled by incorporating La2O3 or Sc2O3 near the high-k/SiO2 interface.",

author = "M. Adachi and K. Okamoto and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and T. Hattori and H. Iwai",

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AU - Okamoto, K.

AU - Kakushima, K.

AU - Ahmet, P.

AU - Tsutsui, K.

AU - Sugii, N.

AU - Hattori, T.

AU - Iwai, H.

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N2 - High-k/SiO2 interfacial properties are most critical factors determining the high-k gate MOSFET characteristics. We fabricated MOS capacitors of metal/HfO2/SiO2/Si structures in which were contained in the HfO2 layer. Flat-band voltage (VFB) shifts were measured by changing composition in metal/HfO2/(HfO2) 1-x(La2O3)x/SiO2/Si and metal/HfO2/(HfO2)1-x. (Sc2O 3)x/SiO2/Si structures. It was found that VFB shift arises mainly from high-k/SiO2 interface rather than metal/high-k interface. VFB could be effectively controlled by incorporating La2O3 or Sc2O3 near the high-k/SiO2 interface.

AB - High-k/SiO2 interfacial properties are most critical factors determining the high-k gate MOSFET characteristics. We fabricated MOS capacitors of metal/HfO2/SiO2/Si structures in which were contained in the HfO2 layer. Flat-band voltage (VFB) shifts were measured by changing composition in metal/HfO2/(HfO2) 1-x(La2O3)x/SiO2/Si and metal/HfO2/(HfO2)1-x. (Sc2O 3)x/SiO2/Si structures. It was found that VFB shift arises mainly from high-k/SiO2 interface rather than metal/high-k interface. VFB could be effectively controlled by incorporating La2O3 or Sc2O3 near the high-k/SiO2 interface.

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