TY - GEN
T1 - Control of interface shape by non-axisymmetric solution convection in top-seeded solution growth of SiC crystal
AU - Koike, Daiki
AU - Umezaki, Tomonori
AU - Murayama, Kenta
AU - Aoyagi, Kenta
AU - Harada, Shunta
AU - Tagawa, Miho
AU - Sakai, Takenobu
AU - Ujihara, Toru
N1 - Publisher Copyright:
© (2015) Trans Tech Publications, Switzerland.
PY - 2015
Y1 - 2015
N2 - We achieved the convex growth interface shape in top-seeded solution growth of SiC applying non-axisymmetric solution convection induced by non-axisymmetric temperature distribution. The detailed solution flow, temperature distribution and carbon concentration distribution were calculated by 3-dimensional numerical analysis. In the present case, the solution flow below the crystal was unidirectional and the supersaturation was increased along the solution flow direction. By the rotation of the crystal in the unidirectional flow and the temperature distribution, we successfully obtained the crystal with the convex growth interface shape.
AB - We achieved the convex growth interface shape in top-seeded solution growth of SiC applying non-axisymmetric solution convection induced by non-axisymmetric temperature distribution. The detailed solution flow, temperature distribution and carbon concentration distribution were calculated by 3-dimensional numerical analysis. In the present case, the solution flow below the crystal was unidirectional and the supersaturation was increased along the solution flow direction. By the rotation of the crystal in the unidirectional flow and the temperature distribution, we successfully obtained the crystal with the convex growth interface shape.
UR - http://www.scopus.com/inward/record.url?scp=84950341866&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84950341866&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.821-823.18
DO - 10.4028/www.scientific.net/MSF.821-823.18
M3 - Conference contribution
AN - SCOPUS:84950341866
SN - 9783038354789
T3 - Materials Science Forum
SP - 18
EP - 21
BT - Silicon Carbide and Related Materials 2014
A2 - Chaussende, Didier
A2 - Ferro, Gabriel
PB - Trans Tech Publications Ltd
T2 - European Conference on Silicon Carbide and Related Materials, ECSCRM 2014
Y2 - 21 September 2014 through 25 September 2014
ER -