Control of oxidation and reduction reactions at HfSiOSi interfaces through N exposure or incorporation

H. Kamada; T. Tanimura; S. Toyoda; H. Kumigashira; M. Oshima; G. L. Liu; Z. Liu; K. Ikeda

doi:10.1063/1.3036894

Control of oxidation and reduction reactions at HfSiOSi interfaces through N exposure or incorporation

H. Kamada, T. Tanimura, S. Toyoda, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, K. Ikeda

IMRAM - Division of Inorganic Material Research

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Using synchrotron-radiation photoemission spectroscopy, we have investigated oxidation and reduction reactions of HfSiO (N) Si gate stack structures annealed in a N₂ or O₂ atmosphere. It is found that both oxidation and reduction reactions can be suppressed by using nitrogen-incorporated HfSiO films in the annealing process at proper partial pressure of N₂ gas (P _N2 ∼100 Torr). The detailed analysis of " Si O₂ equivalent thicknesses" for annealed HfSiO and HfSiON films reveals that ambient N₂ gas suppresses only the reduction reaction, while nitrogen atoms incorporated in dielectrics suppress both oxidation and reduction reactions.

Original language	English
Article number	212903
Journal	Applied Physics Letters
Volume	93
Issue number	21
DOIs	https://doi.org/10.1063/1.3036894
Publication status	Published - 2008

Access to Document

10.1063/1.3036894

Cite this

@article{4c36e95950e0452788cbe78f2887328d,

title = "Control of oxidation and reduction reactions at HfSiOSi interfaces through N exposure or incorporation",

abstract = "Using synchrotron-radiation photoemission spectroscopy, we have investigated oxidation and reduction reactions of HfSiO (N) Si gate stack structures annealed in a N2 or O2 atmosphere. It is found that both oxidation and reduction reactions can be suppressed by using nitrogen-incorporated HfSiO films in the annealing process at proper partial pressure of N2 gas (P N2 ∼100 Torr). The detailed analysis of {"} Si O2 equivalent thicknesses{"} for annealed HfSiO and HfSiON films reveals that ambient N2 gas suppresses only the reduction reaction, while nitrogen atoms incorporated in dielectrics suppress both oxidation and reduction reactions.",

author = "H. Kamada and T. Tanimura and S. Toyoda and H. Kumigashira and M. Oshima and Liu, {G. L.} and Z. Liu and K. Ikeda",

note = "Funding Information: The authors are indebted to Semiconductor Leading Edge Technologies (Selete) Inc. for providing the samples. This work was supported by the Semiconductor Technology Academic Research Center (STARC).",

year = "2008",

doi = "10.1063/1.3036894",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

}

TY - JOUR

T1 - Control of oxidation and reduction reactions at HfSiOSi interfaces through N exposure or incorporation

AU - Kamada, H.

AU - Tanimura, T.

AU - Toyoda, S.

AU - Kumigashira, H.

AU - Oshima, M.

AU - Liu, G. L.

AU - Liu, Z.

AU - Ikeda, K.

N1 - Funding Information: The authors are indebted to Semiconductor Leading Edge Technologies (Selete) Inc. for providing the samples. This work was supported by the Semiconductor Technology Academic Research Center (STARC).

PY - 2008

Y1 - 2008

N2 - Using synchrotron-radiation photoemission spectroscopy, we have investigated oxidation and reduction reactions of HfSiO (N) Si gate stack structures annealed in a N2 or O2 atmosphere. It is found that both oxidation and reduction reactions can be suppressed by using nitrogen-incorporated HfSiO films in the annealing process at proper partial pressure of N2 gas (P N2 ∼100 Torr). The detailed analysis of " Si O2 equivalent thicknesses" for annealed HfSiO and HfSiON films reveals that ambient N2 gas suppresses only the reduction reaction, while nitrogen atoms incorporated in dielectrics suppress both oxidation and reduction reactions.

AB - Using synchrotron-radiation photoemission spectroscopy, we have investigated oxidation and reduction reactions of HfSiO (N) Si gate stack structures annealed in a N2 or O2 atmosphere. It is found that both oxidation and reduction reactions can be suppressed by using nitrogen-incorporated HfSiO films in the annealing process at proper partial pressure of N2 gas (P N2 ∼100 Torr). The detailed analysis of " Si O2 equivalent thicknesses" for annealed HfSiO and HfSiON films reveals that ambient N2 gas suppresses only the reduction reaction, while nitrogen atoms incorporated in dielectrics suppress both oxidation and reduction reactions.

UR - http://www.scopus.com/inward/record.url?scp=57049176499&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=57049176499&partnerID=8YFLogxK

U2 - 10.1063/1.3036894

DO - 10.1063/1.3036894

M3 - Article

AN - SCOPUS:57049176499

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 212903

ER -

Control of oxidation and reduction reactions at HfSiOSi interfaces through N exposure or incorporation

Abstract

Access to Document

Other files and links

Fingerprint

Cite this