Pseudomorphic ZnSe layers on GaAs(0 0 1) were grown by molecular beam epitaxy under the light illumination with photon energy of about 1.8 eV. In the layers, isolated Shockley-type stacking faults on (1 1 1), bordering not on the ZnSe/GaAs interface but on the ZnSe surface, as well as the well-known stacking fault pairs, were formed. The sum of the stacking fault areas was small in comparison with the layers grown by molecular beam epitaxy without light illumination.
- Molecular beam epitaxy
- Stacking faults
- Transmission electron microscopy