TY - JOUR
T1 - Control of the stacking fault areas in pseudomorphic ZnSe layers by photo-molecular beam epitaxy
AU - Ohno, Y.
AU - Taishi, T.
AU - Yonenaga, I.
AU - Ichikawa, S.
AU - Hirai, R.
AU - Takeda, S.
N1 - Funding Information:
This work was partially supported by the Ministry of Education, Culture, Sports, Science, and Technology, Grant-in-Aid for Scientific Research (B), No. 19310072, 2007–2009.
PY - 2007/12/15
Y1 - 2007/12/15
N2 - Pseudomorphic ZnSe layers on GaAs(0 0 1) were grown by molecular beam epitaxy under the light illumination with photon energy of about 1.8 eV. In the layers, isolated Shockley-type stacking faults on (1 1 1), bordering not on the ZnSe/GaAs interface but on the ZnSe surface, as well as the well-known stacking fault pairs, were formed. The sum of the stacking fault areas was small in comparison with the layers grown by molecular beam epitaxy without light illumination.
AB - Pseudomorphic ZnSe layers on GaAs(0 0 1) were grown by molecular beam epitaxy under the light illumination with photon energy of about 1.8 eV. In the layers, isolated Shockley-type stacking faults on (1 1 1), bordering not on the ZnSe/GaAs interface but on the ZnSe surface, as well as the well-known stacking fault pairs, were formed. The sum of the stacking fault areas was small in comparison with the layers grown by molecular beam epitaxy without light illumination.
KW - Molecular beam epitaxy
KW - Stacking faults
KW - Transmission electron microscopy
KW - ZnSe
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U2 - 10.1016/j.physb.2007.09.043
DO - 10.1016/j.physb.2007.09.043
M3 - Article
AN - SCOPUS:36048977271
SN - 0921-4526
VL - 401-402
SP - 650
EP - 653
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
ER -