TY - JOUR
T1 - Controlled carbonization of Si(001) surface using hydrocarbon radicals in ultrahigh vacuum
AU - Hatayama, Tomoaki
AU - Tarui, Yoichiro
AU - Yoshinobu, Tastuo
AU - Fuyuki, Takashi
AU - Matsunami, Hiroyuki
N1 - Funding Information:
This work was partially supported by a Mazda Foundation Research Grant.
PY - 1994/3/1
Y1 - 1994/3/1
N2 - Carbonization of a Si(001) surface by hydrocarbon radicals is obtained in an ultrahigh vacuum at 750°C. Hydrocarbon gases such as C3H8, C2H6 and CH4 are decomposed by thermal cracking, and generated radical species are investigated by quadrupole mass analysis. The thickness of carbonized layer is controlled easily by cracking temperature and exposure time, and very smooth surfaces are obtained. The differences in the cases of various hydrocarbon sources are discussed in detail.
AB - Carbonization of a Si(001) surface by hydrocarbon radicals is obtained in an ultrahigh vacuum at 750°C. Hydrocarbon gases such as C3H8, C2H6 and CH4 are decomposed by thermal cracking, and generated radical species are investigated by quadrupole mass analysis. The thickness of carbonized layer is controlled easily by cracking temperature and exposure time, and very smooth surfaces are obtained. The differences in the cases of various hydrocarbon sources are discussed in detail.
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U2 - 10.1016/0022-0248(94)90435-9
DO - 10.1016/0022-0248(94)90435-9
M3 - Article
AN - SCOPUS:0028383890
SN - 0022-0248
VL - 136
SP - 333
EP - 337
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
ER -