Controlling the carrier lifetime of nearly threading-dislocation-free ZnO homoepitaxial films by 3 d transition-metal doping

S. F. Chichibu; K. Kojima; Y. Yamazaki; K. Furusawa; A. Uedono

doi:10.1063/1.4939838

Controlling the carrier lifetime of nearly threading-dislocation-free ZnO homoepitaxial films by 3 d transition-metal doping

S. F. Chichibu, K. Kojima, Y. Yamazaki, K. Furusawa, A. Uedono

IMRAM - Division of Measurements

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9 Citations (Scopus)

Abstract

Carrier lifetime in nearly threading-dislocation-free ZnO homoepitaxial films was controlled by doping 3d transition-metals (TMs), Ni and Mn. The photoluminescence lifetime of the near-band-edge emission (τ_PL) was decreased linearly by increasing TM concentration, indicating that such TMs are predominant nonradiative recombination centers (NRCs). From this relationship, exciton capture-cross-section (σex) of 2.4 × 10^-15 cm² is obtained. Because σex of native-NRCs (Zn-vacancy complexes) is likely larger than this value, the linear dependence of the internal quantum efficiency on τ_PL observed in our TM-doped ZnO and unintentionally doped ZnO in literatures indicates that the concentrations of native-NRCs in the latter are "lower than" 10¹⁶-10¹⁷cm^-3.

Original language	English
Article number	021904
Journal	Applied Physics Letters
Volume	108
Issue number	2
DOIs	https://doi.org/10.1063/1.4939838
Publication status	Published - 2016 Jan 11

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abstract = "Carrier lifetime in nearly threading-dislocation-free ZnO homoepitaxial films was controlled by doping 3d transition-metals (TMs), Ni and Mn. The photoluminescence lifetime of the near-band-edge emission (τPL) was decreased linearly by increasing TM concentration, indicating that such TMs are predominant nonradiative recombination centers (NRCs). From this relationship, exciton capture-cross-section (σex) of 2.4 × 10-15 cm2 is obtained. Because σex of native-NRCs (Zn-vacancy complexes) is likely larger than this value, the linear dependence of the internal quantum efficiency on τPL observed in our TM-doped ZnO and unintentionally doped ZnO in literatures indicates that the concentrations of native-NRCs in the latter are {"}lower than{"} 1016-1017cm-3.",

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AU - Chichibu, S. F.

AU - Kojima, K.

AU - Yamazaki, Y.

AU - Furusawa, K.

AU - Uedono, A.

PY - 2016/1/11

Y1 - 2016/1/11

N2 - Carrier lifetime in nearly threading-dislocation-free ZnO homoepitaxial films was controlled by doping 3d transition-metals (TMs), Ni and Mn. The photoluminescence lifetime of the near-band-edge emission (τPL) was decreased linearly by increasing TM concentration, indicating that such TMs are predominant nonradiative recombination centers (NRCs). From this relationship, exciton capture-cross-section (σex) of 2.4 × 10-15 cm2 is obtained. Because σex of native-NRCs (Zn-vacancy complexes) is likely larger than this value, the linear dependence of the internal quantum efficiency on τPL observed in our TM-doped ZnO and unintentionally doped ZnO in literatures indicates that the concentrations of native-NRCs in the latter are "lower than" 1016-1017cm-3.

AB - Carrier lifetime in nearly threading-dislocation-free ZnO homoepitaxial films was controlled by doping 3d transition-metals (TMs), Ni and Mn. The photoluminescence lifetime of the near-band-edge emission (τPL) was decreased linearly by increasing TM concentration, indicating that such TMs are predominant nonradiative recombination centers (NRCs). From this relationship, exciton capture-cross-section (σex) of 2.4 × 10-15 cm2 is obtained. Because σex of native-NRCs (Zn-vacancy complexes) is likely larger than this value, the linear dependence of the internal quantum efficiency on τPL observed in our TM-doped ZnO and unintentionally doped ZnO in literatures indicates that the concentrations of native-NRCs in the latter are "lower than" 1016-1017cm-3.

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Controlling the carrier lifetime of nearly threading-dislocation-free ZnO homoepitaxial films by 3 d transition-metal doping

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