Convergent beam electron diffraction measurement for local strain distribution in Si around a NiSi2 island

Yutaka Wakayama; Yumiko Takahashi; Shun Ichiro Tanaka

doi:10.1143/jjap.36.5072

Convergent beam electron diffraction measurement for local strain distribution in Si around a NiSi₂ island

Yutaka Wakayama, Yumiko Takahashi, Shun Ichiro Tanaka

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Lattice strain distribution was measured in Si substrates near NiSi₂ islands. Using the convergent beam electron diffraction (CBED) technique, quantitative and highly spatially resolved evaluations were carried out. Variations in the CBED patterns were found to be due to a combination of stress components with different orientations and magnitude. As a result, it was revealed that, in addition to normal stress components, singular stress with characteristic orientation or extremely high strain concentration was observed, especially near the NiSi₂ island corner. This actual strain distribution was considered to be highly influenced by the shape, size and orientation of the NiSi₂ island on Si substrates.

Original language	English
Pages (from-to)	5072-5078
Number of pages	7
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	36
Issue number	8
DOIs	https://doi.org/10.1143/jjap.36.5072
Publication status	Published - 1997 Aug
Externally published	Yes

Keywords

CBED
NiSi island
Si
Strain distribution

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.36.5072

Cite this

Convergent beam electron diffraction measurement for local strain distribution in Si around a NiSi₂ island. / Wakayama, Yutaka; Takahashi, Yumiko; Tanaka, Shun Ichiro.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 36, No. 8, 08.1997, p. 5072-5078.

Research output: Contribution to journal › Article › peer-review

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