Corrections to AlGaN/GaN HEMTs with damage-free neutral beam etched gate recess for high-performance millimeter-wave applications

Yen Ku Lin, Shuichi Noda, Hsiao Chieh Lo, Shih Chien Liu, Chia Hsun Wu, Yuen Yee Wong, Quang Ho Luc, Po Chun Chang, Heng Tung Hsu, Seiji Samukawa, Edward Yi Chang

Research output: Contribution to journalLetterpeer-review

Original languageEnglish
Article number7802679
Pages (from-to)149
Number of pages1
JournalIEEE Electron Device Letters
Issue number1
Publication statusPublished - 2017 Jan

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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