@article{564dd2e41c1c4371b331cab33b085015,
title = "Corrections to AlGaN/GaN HEMTs with damage-free neutral beam etched gate recess for high-performance millimeter-wave applications",
author = "Lin, {Yen Ku} and Shuichi Noda and Lo, {Hsiao Chieh} and Liu, {Shih Chien} and Wu, {Chia Hsun} and Wong, {Yuen Yee} and Luc, {Quang Ho} and Chang, {Po Chun} and Hsu, {Heng Tung} and Seiji Samukawa and Chang, {Edward Yi}",
note = "Funding Information: This work was supported in part by TSMC, NCTU-UCB I-RiCE Program, in part by the Ministry of Science and Technology, Taiwan, under Grant MOST 105-2911-I-009-301, Grant MOST 104-2221-E-009-188, Grant MOST 105-2221-E-009-148, and GrantMOST 104-2221-E-009-0-55-MY2, and in part by the National Chung-Shan Institute of Science & Technology, Taiwan, under Grant NCSIST-102-V211 (105).",
year = "2017",
month = jan,
doi = "10.1109/LED.2016.2634606",
language = "English",
volume = "38",
pages = "149",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",
}