CORRELATION BETWEEN ATOMIC-SCALE STRUCTURES AND ELECTRONIC PROPERTIES AT COMPOUND SEMICONDUCTOR LAYERED INTERFACES.

Hideki Hasegawa; Hideo Ohno; Tetsuya Haga; Yutaka Abe; Heishichirou Takahashi; Takayuki Sawada; Li He; Hirotatsu Ishii

doi:10.7567/ssdm.1987.s-iii-6

CORRELATION BETWEEN ATOMIC-SCALE STRUCTURES AND ELECTRONIC PROPERTIES AT COMPOUND SEMICONDUCTOR LAYERED INTERFACES.

Hideki Hasegawa, Hideo Ohno, Tetsuya Haga, Yutaka Abe, Heishichirou Takahashi, Takayuki Sawada, Li He, Hirotatsu Ishii

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Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Correlation between atomic-scale structures and interface state properties is investigated for compound semiconductor insulator-semiconductor (I-S) and semiconductor-semiconductor(S-S) interfaces, using cross-sectional TEM, RBS, XPS and C-V techniques. Thermal, anodic and plasma CVD I-S interfaces and homo- and hetero-epitaxial MOVPE interfaces were formed on GaAs and InP. The presence of processing-introduced disorder and its remarkably strong correlation with interface state density distributions were found, being consistent with the recently proposed disorder-induced gap state (DIGS) model. A particular space and energy distribution of the DIGs allows a complete self-consistent computer reproduction of hysteresis effects in MIS C-V curves.

Original language	English
Title of host publication	Conference on Solid State Devices and Materials
Publisher	Japan Soc of Applied Physics
Pages	479-482
Number of pages	4
ISBN (Print)	4930813212, 9784930813213
DOIs	https://doi.org/10.7567/ssdm.1987.s-iii-6
Publication status	Published - 1987

Publication series

Name	Conference on Solid State Devices and Materials

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10.7567/ssdm.1987.s-iii-6

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Hasegawa, H., Ohno, H., Haga, T., Abe, Y., Takahashi, H., Sawada, T., He, L., & Ishii, H. (1987). CORRELATION BETWEEN ATOMIC-SCALE STRUCTURES AND ELECTRONIC PROPERTIES AT COMPOUND SEMICONDUCTOR LAYERED INTERFACES. In Conference on Solid State Devices and Materials (pp. 479-482). (Conference on Solid State Devices and Materials). Japan Soc of Applied Physics. https://doi.org/10.7567/ssdm.1987.s-iii-6

@inproceedings{c470149dc1ac4b8dac3d2a4cb39c0d88,

title = "CORRELATION BETWEEN ATOMIC-SCALE STRUCTURES AND ELECTRONIC PROPERTIES AT COMPOUND SEMICONDUCTOR LAYERED INTERFACES.",

abstract = "Correlation between atomic-scale structures and interface state properties is investigated for compound semiconductor insulator-semiconductor (I-S) and semiconductor-semiconductor(S-S) interfaces, using cross-sectional TEM, RBS, XPS and C-V techniques. Thermal, anodic and plasma CVD I-S interfaces and homo- and hetero-epitaxial MOVPE interfaces were formed on GaAs and InP. The presence of processing-introduced disorder and its remarkably strong correlation with interface state density distributions were found, being consistent with the recently proposed disorder-induced gap state (DIGS) model. A particular space and energy distribution of the DIGs allows a complete self-consistent computer reproduction of hysteresis effects in MIS C-V curves.",

author = "Hideki Hasegawa and Hideo Ohno and Tetsuya Haga and Yutaka Abe and Heishichirou Takahashi and Takayuki Sawada and Li He and Hirotatsu Ishii",

year = "1987",

doi = "10.7567/ssdm.1987.s-iii-6",

language = "English",

isbn = "4930813212",

series = "Conference on Solid State Devices and Materials",

publisher = "Japan Soc of Applied Physics",

pages = "479--482",

booktitle = "Conference on Solid State Devices and Materials",

}

Hasegawa, H, Ohno, H, Haga, T, Abe, Y, Takahashi, H, Sawada, T, He, L & Ishii, H 1987, CORRELATION BETWEEN ATOMIC-SCALE STRUCTURES AND ELECTRONIC PROPERTIES AT COMPOUND SEMICONDUCTOR LAYERED INTERFACES. in Conference on Solid State Devices and Materials. Conference on Solid State Devices and Materials, Japan Soc of Applied Physics, pp. 479-482. https://doi.org/10.7567/ssdm.1987.s-iii-6

CORRELATION BETWEEN ATOMIC-SCALE STRUCTURES AND ELECTRONIC PROPERTIES AT COMPOUND SEMICONDUCTOR LAYERED INTERFACES. / Hasegawa, Hideki; Ohno, Hideo; Haga, Tetsuya et al.
Conference on Solid State Devices and Materials. Japan Soc of Applied Physics, 1987. p. 479-482 (Conference on Solid State Devices and Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - CORRELATION BETWEEN ATOMIC-SCALE STRUCTURES AND ELECTRONIC PROPERTIES AT COMPOUND SEMICONDUCTOR LAYERED INTERFACES.

AU - Hasegawa, Hideki

AU - Ohno, Hideo

AU - Haga, Tetsuya

AU - Abe, Yutaka

AU - Takahashi, Heishichirou

AU - Sawada, Takayuki

AU - He, Li

AU - Ishii, Hirotatsu

PY - 1987

Y1 - 1987

N2 - Correlation between atomic-scale structures and interface state properties is investigated for compound semiconductor insulator-semiconductor (I-S) and semiconductor-semiconductor(S-S) interfaces, using cross-sectional TEM, RBS, XPS and C-V techniques. Thermal, anodic and plasma CVD I-S interfaces and homo- and hetero-epitaxial MOVPE interfaces were formed on GaAs and InP. The presence of processing-introduced disorder and its remarkably strong correlation with interface state density distributions were found, being consistent with the recently proposed disorder-induced gap state (DIGS) model. A particular space and energy distribution of the DIGs allows a complete self-consistent computer reproduction of hysteresis effects in MIS C-V curves.

AB - Correlation between atomic-scale structures and interface state properties is investigated for compound semiconductor insulator-semiconductor (I-S) and semiconductor-semiconductor(S-S) interfaces, using cross-sectional TEM, RBS, XPS and C-V techniques. Thermal, anodic and plasma CVD I-S interfaces and homo- and hetero-epitaxial MOVPE interfaces were formed on GaAs and InP. The presence of processing-introduced disorder and its remarkably strong correlation with interface state density distributions were found, being consistent with the recently proposed disorder-induced gap state (DIGS) model. A particular space and energy distribution of the DIGs allows a complete self-consistent computer reproduction of hysteresis effects in MIS C-V curves.

UR - http://www.scopus.com/inward/record.url?scp=0023562031&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023562031&partnerID=8YFLogxK

U2 - 10.7567/ssdm.1987.s-iii-6

DO - 10.7567/ssdm.1987.s-iii-6

M3 - Conference contribution

AN - SCOPUS:0023562031

SN - 4930813212

SN - 9784930813213

T3 - Conference on Solid State Devices and Materials

SP - 479

EP - 482

BT - Conference on Solid State Devices and Materials

PB - Japan Soc of Applied Physics

ER -

CORRELATION BETWEEN ATOMIC-SCALE STRUCTURES AND ELECTRONIC PROPERTIES AT COMPOUND SEMICONDUCTOR LAYERED INTERFACES.

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