| Original language | English |
|---|---|
| Pages (from-to) | 698-705 |
| Number of pages | 8 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 21 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2003 |
Correlation between current-voltage characteristics and dislocations evaluated with submicrometer Schottky contacts on n-GaN grown by metalorganic chemical vapor deposition
Kenji Shiojima, Tetsuya Suemitsu
Research output: Contribution to journal › Article › peer-review
27
Citations
(Scopus)