TY - JOUR
T1 - Correlation between the internal quantum efficiency and photoluminescence lifetime of the near-band-edge emission in a ZnO single crystal grown by the hydrothermal method
AU - Kojima, Kazunobu
AU - Chichibu, Shigefusa F.
N1 - Funding Information:
This work was partly supported by Five-Star Alliance and JSPS KAKENHI (Grant No.: JP16H06427), Japan.
Publisher Copyright:
© 2020 The Japan Society of Applied Physics.
PY - 2020/12/1
Y1 - 2020/12/1
N2 - The internal quantum efficiency (IQE) and photoluminescence lifetime of the near-band-edge emission in a ZnO single crystal grown by the hydrothermal method were measured by the omnidirectional photoluminescence and time-resolved photoluminescence spectroscopy, respectively. The IQE showed a monotonic increase when the cw photo pumping density exceeds W cm-2, while a constant IQE was observed below that. By using the data set of IQE and measured under pulsed excitation conditions, radiative and nonradiative recombination lifetimes were separately quantified. Since a significant increase was observed for the nonradiative recombination lifetime, the origin of the IQE increase was revealed to be dominated by the saturation of nonradiative recombination centers.
AB - The internal quantum efficiency (IQE) and photoluminescence lifetime of the near-band-edge emission in a ZnO single crystal grown by the hydrothermal method were measured by the omnidirectional photoluminescence and time-resolved photoluminescence spectroscopy, respectively. The IQE showed a monotonic increase when the cw photo pumping density exceeds W cm-2, while a constant IQE was observed below that. By using the data set of IQE and measured under pulsed excitation conditions, radiative and nonradiative recombination lifetimes were separately quantified. Since a significant increase was observed for the nonradiative recombination lifetime, the origin of the IQE increase was revealed to be dominated by the saturation of nonradiative recombination centers.
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U2 - 10.35848/1882-0786/abcd73
DO - 10.35848/1882-0786/abcd73
M3 - Article
AN - SCOPUS:85097145638
SN - 1882-0778
VL - 13
JO - Applied Physics Express
JF - Applied Physics Express
IS - 12
M1 - 121005
ER -