Correlation between ZnO nanowire growth and the surface of AlN substrate

Sang Hyun Lee, In Ho Im, Hyun Jung Lee, Zahra Vashaei, Takashi Hanada, Meoung Whan Cho, Takafumi Yao

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Single-crystalline ZnO nanowires are fabricated by thermal chemical vapor transport and condensation on AlN epilayers without employing any metal catalyst. Before the growth of ZnO nanowires, the surface of AlN epilayers was treated by HF solution and then changed to a mixture of flat plane and hillocks according to dipping time. ZnO nanowires along the c-axis direction of hexagonal structures were synthesized only on the HF treated AlN surface. ZnO nanowire arrays have been obtained by selective etching by photolithography process. A mechanism for nanowire growth on modified AlN epilayer is proposed.

Original languageEnglish
Pages (from-to)2640-2642
Number of pages3
JournalCrystal Growth and Design
Issue number12
Publication statusPublished - 2006 Dec


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