Correlation of surface chemistry of GaAs substrates with growth mode and stacking fault density in ZnSe epilayers

Soon Ku Hong; Ji Ho Chang; Takashi Hanada; Elisabeth Kurtz; Masaoki Oku; Takafumi Yao

doi:10.1116/1.1513645

Correlation of surface chemistry of GaAs substrates with growth mode and stacking fault density in ZnSe epilayers

Soon Ku Hong, Ji Ho Chang, Takashi Hanada, Elisabeth Kurtz, Masaoki Oku, Takafumi Yao

IMR - Materials Design Division

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The correlation of surface chemistry of GaAs substrates with growth model and stacking fault density in ZnSe epilayers was studied. The surface oxide layers of GaAs substrates before and after chemical etching using a NH₄OH-based solution were also investigated using angle-resolved X-ray photoelectron spectroscopy. It was found that the proper pregrowth treatments of epiready GaAs (001) substrates to obtain clean surfaces are important to two-dimensional layer-by-layer growth and suppression of generation of stacking faults.

Original language	English
Pages (from-to)	1948-1954
Number of pages	7
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	20
Issue number	6
DOIs	https://doi.org/10.1116/1.1513645
Publication status	Published - 2002 Nov

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abstract = "The correlation of surface chemistry of GaAs substrates with growth model and stacking fault density in ZnSe epilayers was studied. The surface oxide layers of GaAs substrates before and after chemical etching using a NH4OH-based solution were also investigated using angle-resolved X-ray photoelectron spectroscopy. It was found that the proper pregrowth treatments of epiready GaAs (001) substrates to obtain clean surfaces are important to two-dimensional layer-by-layer growth and suppression of generation of stacking faults.",

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AU - Hong, Soon Ku

AU - Chang, Ji Ho

AU - Hanada, Takashi

AU - Kurtz, Elisabeth

AU - Oku, Masaoki

AU - Yao, Takafumi

PY - 2002/11

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AB - The correlation of surface chemistry of GaAs substrates with growth model and stacking fault density in ZnSe epilayers was studied. The surface oxide layers of GaAs substrates before and after chemical etching using a NH4OH-based solution were also investigated using angle-resolved X-ray photoelectron spectroscopy. It was found that the proper pregrowth treatments of epiready GaAs (001) substrates to obtain clean surfaces are important to two-dimensional layer-by-layer growth and suppression of generation of stacking faults.

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JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

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Correlation of surface chemistry of GaAs substrates with growth mode and stacking fault density in ZnSe epilayers

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