The correlation of surface chemistry of GaAs substrates with growth model and stacking fault density in ZnSe epilayers was studied. The surface oxide layers of GaAs substrates before and after chemical etching using a NH4OH-based solution were also investigated using angle-resolved X-ray photoelectron spectroscopy. It was found that the proper pregrowth treatments of epiready GaAs (001) substrates to obtain clean surfaces are important to two-dimensional layer-by-layer growth and suppression of generation of stacking faults.
|Number of pages||7|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 2002 Nov|