Corrigendum to “Preparation of SiC coatings on graphite substrates via CVD using polysilaethylene” [J. Cryst. Growth 649 (2025) 127931] (Journal of Crystal Growth (2025) 649, (S0022024824003695), (10.1016/j.jcrysgro.2024.127931))

The authors regret giving the name of Mr. A. Okuno as a co-author and adding SANKO Co. Ltd. and TUP Inc. as affiliations without the consent of co-workers. After obtaining consent, all authors agreed to publish the paper with Dr. H. Sato, Dr. T. Goto and Dr. A. Yoshikawa affiliated with New Industry Creation Hatchery Center, Tohoku University. The correct details are updated as above. The authors would like to apologise for any inconvenience caused.