Cost-efficient self-terminated write driver for spin-transfer-torque RAM and logic

Daisuke Suzuki, Masanori Natsui, Akira Mochizuki, Takahiro Hanyu

Research output: Contribution to journalArticlepeer-review

48 Citations (Scopus)


A cost-efficient self-terminated write driver is proposed for low-energy RAM and logic circuits by using spin-transfer-torque (STT)-magnetic tunnel junction (MTJ) devices. Since a bidirectional write current is required for STT switching, data-dependent write-completion monitoring, where the node with large voltage difference between before and after the switching is selectively used, makes it possible to achieve sufficiently large sense margin at any write current directions. By the enhancement of sense margin, write-completion monitoring and self-write-termination circuitries are simplified. Thus, 60% of transistor counts reduction and further robust write-completion detection under process variation are achieved in comparison with those of the prior work.

Original languageEnglish
Article number6971313
JournalIEEE Transactions on Magnetics
Issue number11
Publication statusPublished - 2014 Nov 1


  • Complementary-metal-oxide semiconductor (CMOS)
  • dynamic logic
  • magnetic tunnel junction (MTJ) device
  • nonvolatile logic
  • nonvolatile memory
  • spintronics


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