Creating novel transport properties in electric double layer field effect transistors based on layered materials

J. T. Ye; M. F. Craciun; M. Koshino; S. Russo; Y. Kasahara; H. T. Yuan; H. Shimotani; A. F. Morpurgo; Y. Iwasa

doi:10.1557/opl.2011.289

Creating novel transport properties in electric double layer field effect transistors based on layered materials

J. T. Ye, M. F. Craciun, M. Koshino, S. Russo, Y. Kasahara, H. T. Yuan, H. Shimotani, A. F. Morpurgo, Y. Iwasa

SCI - Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We present a study on the liquid/solid interface, which can be electrostatically doped to a high carrier density (n-10 ¹⁴ cm ^-2) by electric-double-layer gating. Using micro-cleavage technique on the layered materials: ZrNCl and graphene, atomically flat channel surfaces can be easily prepared. Intrinsic high carrier density transport regime is accessed at the channel interface of electric double-layer field effect transistor, where novel transport properties are unveiled as the field-induced superconductivity on the ZrNCl with high transition temperature at 15 K, and accessing a high carrier density up to 2×10 ¹⁴ cm ^-2 in graphene and its multi-layers.

Original language	English
Title of host publication	Novel Fabrication Methods for Electronic Devices
Pages	103-108
Number of pages	6
DOIs	https://doi.org/10.1557/opl.2011.289
Publication status	Published - 2011
Event	2010 MRS Fall Meeting - Boston, MA, United States Duration: 2010 Nov 29 → 2010 Dec 3

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1288
ISSN (Print)	0272-9172

Conference

Conference	2010 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	10/11/29 → 10/12/3

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10.1557/opl.2011.289

Cite this

Ye, J. T., Craciun, M. F., Koshino, M., Russo, S., Kasahara, Y., Yuan, H. T., Shimotani, H., Morpurgo, A. F., & Iwasa, Y. (2011). Creating novel transport properties in electric double layer field effect transistors based on layered materials. In Novel Fabrication Methods for Electronic Devices (pp. 103-108). (Materials Research Society Symposium Proceedings; Vol. 1288). https://doi.org/10.1557/opl.2011.289

@inproceedings{ab8acb79d05548c997477ec479b7459c,

title = "Creating novel transport properties in electric double layer field effect transistors based on layered materials",

abstract = "We present a study on the liquid/solid interface, which can be electrostatically doped to a high carrier density (n-10 14 cm -2) by electric-double-layer gating. Using micro-cleavage technique on the layered materials: ZrNCl and graphene, atomically flat channel surfaces can be easily prepared. Intrinsic high carrier density transport regime is accessed at the channel interface of electric double-layer field effect transistor, where novel transport properties are unveiled as the field-induced superconductivity on the ZrNCl with high transition temperature at 15 K, and accessing a high carrier density up to 2×10 14 cm -2 in graphene and its multi-layers.",

author = "Ye, {J. T.} and Craciun, {M. F.} and M. Koshino and S. Russo and Y. Kasahara and Yuan, {H. T.} and H. Shimotani and Morpurgo, {A. F.} and Y. Iwasa",

note = "Funding Information: We thank D. Chiba, Y. Ohno, F. Matsukura, and H. Ohno for providing the electron beam lithography facility at Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University. MFC, SR, and AFM would like to thank S. Tarucha for support and for a collaboration during which this work has started. This research is funded by MEXT and JST. AFM gratefully acknowledges MaNEP and the Swiss National Science Foundation (project 200021_121569) for financial support.; 2010 MRS Fall Meeting ; Conference date: 29-11-2010 Through 03-12-2010",

year = "2011",

doi = "10.1557/opl.2011.289",

language = "English",

isbn = "9781618395030",

series = "Materials Research Society Symposium Proceedings",

pages = "103--108",

booktitle = "Novel Fabrication Methods for Electronic Devices",

}

Ye, JT, Craciun, MF, Koshino, M, Russo, S, Kasahara, Y, Yuan, HT, Shimotani, H, Morpurgo, AF & Iwasa, Y 2011, Creating novel transport properties in electric double layer field effect transistors based on layered materials. in Novel Fabrication Methods for Electronic Devices. Materials Research Society Symposium Proceedings, vol. 1288, pp. 103-108, 2010 MRS Fall Meeting, Boston, MA, United States, 10/11/29. https://doi.org/10.1557/opl.2011.289

Creating novel transport properties in electric double layer field effect transistors based on layered materials. / Ye, J. T.; Craciun, M. F.; Koshino, M. et al.
Novel Fabrication Methods for Electronic Devices. 2011. p. 103-108 (Materials Research Society Symposium Proceedings; Vol. 1288).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Creating novel transport properties in electric double layer field effect transistors based on layered materials

AU - Ye, J. T.

AU - Craciun, M. F.

AU - Koshino, M.

AU - Russo, S.

AU - Kasahara, Y.

AU - Yuan, H. T.

AU - Shimotani, H.

AU - Morpurgo, A. F.

AU - Iwasa, Y.

N1 - Funding Information: We thank D. Chiba, Y. Ohno, F. Matsukura, and H. Ohno for providing the electron beam lithography facility at Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University. MFC, SR, and AFM would like to thank S. Tarucha for support and for a collaboration during which this work has started. This research is funded by MEXT and JST. AFM gratefully acknowledges MaNEP and the Swiss National Science Foundation (project 200021_121569) for financial support.

PY - 2011

Y1 - 2011

N2 - We present a study on the liquid/solid interface, which can be electrostatically doped to a high carrier density (n-10 14 cm -2) by electric-double-layer gating. Using micro-cleavage technique on the layered materials: ZrNCl and graphene, atomically flat channel surfaces can be easily prepared. Intrinsic high carrier density transport regime is accessed at the channel interface of electric double-layer field effect transistor, where novel transport properties are unveiled as the field-induced superconductivity on the ZrNCl with high transition temperature at 15 K, and accessing a high carrier density up to 2×10 14 cm -2 in graphene and its multi-layers.

AB - We present a study on the liquid/solid interface, which can be electrostatically doped to a high carrier density (n-10 14 cm -2) by electric-double-layer gating. Using micro-cleavage technique on the layered materials: ZrNCl and graphene, atomically flat channel surfaces can be easily prepared. Intrinsic high carrier density transport regime is accessed at the channel interface of electric double-layer field effect transistor, where novel transport properties are unveiled as the field-induced superconductivity on the ZrNCl with high transition temperature at 15 K, and accessing a high carrier density up to 2×10 14 cm -2 in graphene and its multi-layers.

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T3 - Materials Research Society Symposium Proceedings

SP - 103

EP - 108

BT - Novel Fabrication Methods for Electronic Devices

T2 - 2010 MRS Fall Meeting

Y2 - 29 November 2010 through 3 December 2010

ER -

Creating novel transport properties in electric double layer field effect transistors based on layered materials

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