Critical thickness of antiferromagnetic layer in exchange biasing bilayer system

Chiharu Mitsumata, Akimasa Sakuma, Kazuaki Fukamichi, Masakiyo Tsunoda, Migaku Takahashi

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15 Citations (Scopus)


The exchange bias between the ferromagnetic (FM) and antiferromagnetic (AFM) bilayer was investigated within the framework of the classical Heisenberg model. The dependence of the exchange bias on the AFM layer thickness was also calculated by using the Landau-Lifshitz-Gilbert equation. The triple-Q (3Q), AF-I and T1 spin structures are obtained in the disordered γ-phase, ordered L10-, and L12-type lattices, respectively. The exchange bias is caused by the formation of the interfacial domain wall in the AFM layer, and the critical thickness dc of AFM layer is dominated by the varied spin structures. Under the condition where the magnetic anisotropy energy is fixed to equivalent values in different alloys, the critical thickness dc3Q of the disordered γ-phase layer with the 3Q spin structure is thinner than that dcAF-I of the ordered L10-type layer with the AF-I spin structure. Also, the critical thickness dcT1 is thinner than dc AF-I in ordered L12- and L10-type alloys. The relation among the critical thicknesses is dominated by the formation of a magnetic domain wall in the AFM layer. Consequently, the relation of the critical thickness can be represented as √3dc3Q = √2dcT1 = dcAF-I.

Original languageEnglish
Article number044602
JournalJournal of the Physical Society of Japan
Issue number4
Publication statusPublished - 2008 Apr


  • Antiferromagnetic
  • Critical thickness
  • Exchange bias
  • Magnetic domain wall
  • Spin structure


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