Crystal growth and equilibrium crystal shapes of silicon in the melt

Xinbo Yang, K. Fujiwara, K. Maeda, J. Nozawa, H. Koizumi, S. Uda

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


The crystal growth shape (CGS) and equilibrium crystal shape (ECS) of silicon in Si melt are observed using in situ observation. Fully faceted silicon CGSs, which are dominated by the {111} facets, are observed from the {112} and {110} orientation. Silicon CGS in three-dimensional in Si melt is octahedral in shape, bounded by {111} facets. Silicon ECSs in the melt are obtained by the relaxation from the CGSs and exhibit the {111} facets separated by curved interface.

Original languageEnglish
Pages (from-to)574-580
Number of pages7
JournalProgress in Photovoltaics: Research and Applications
Issue number5
Publication statusPublished - 2014 May 1


  • crystal growth shape
  • equilibrium crystal shape
  • silicon


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