Crystal growth and optical properties of Ce-doped (La,Y)2Si2O7 single crystal

Takahiko Horiai, Juraj Paterek, Jan Pejchal, Marketa Jarosova, Jan Rohlicek, Shunsuke Kurosawa, Takashi Hanada, Masao Yoshino, Akihiro Yamaji, Satoshi Toyoda, Hiroki Sato, Yuji Ohashi, Kei Kamada, Yuui Yokota, Akira Yoshikawa, Martin Nikl

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1 Citation (Scopus)


We have grown Ce-doped (La,Y)2Si2O7 single crystal by micro-pulling-down method and investigated its optical and scintillation properties. We have successfully prepared the single crystal with (Ce0.015La0.600Y0.385)2Si2O7 composition. The observed thermal quenching process could be characterized by the quenching temperature (T50%) of 526 K and its activation energy was determined to be 0.62 eV. Further considering the thermal quenching factors, it was found that the thermal quenching was caused by at least the thermal ionization and maybe also by classical thermal quenching. The light output and scintillation decay time were evaluated to be ~12,000 photons/MeV and ~42 ns, respectively. These results indicate that (Ce0.015La0.600Y0.385)2Si2O7 has a great potential for application in scintillation materials.

Original languageEnglish
Article number126252
JournalJournal of Crystal Growth
Publication statusPublished - 2021 Oct 15


  • A2. Growth from melt
  • A2. Seed crystals
  • A2. Single crystal growth
  • B1. Oxides
  • B2. Scintillator materials


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